Display Device

ABSTRACT

There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the unevenness in a display region. A plurality of drawing out ports of the power source supply line are arranged. Further, in the wiring resistance between the external input terminal and the pixel portion power source supply line, potential compensation is performed by supplying potential to the power source supply line by a feedback amplifier. Further, in addition to above structure, the power source supply line may be arranged in a matrix.

This application is a continuation of copending U.S. application Ser.No. 14/689,959 filed on Apr. 17, 2015 which is a continuation of U.S.application Ser. No. 14/107,498 filed on Dec. 16, 2013 (now U.S. Pat.No. 9,013,377 issued Apr. 21, 2015) which is a continuation of U.S.application Ser. No. 13/406,008 filed on Feb. 27, 2012 (now U.S. Pat.No. 8,610,645 issued on Dec. 17, 2013) which is a continuation of U.S.application Ser. No. 11/607,692 filed on Dec. 1, 2006 (now U.S. Pat. No.8,125,415 issued Feb. 28, 2012) which is a continuation of U.S.application Ser. No. 10/813,591 filed on Mar. 30, 2004 (now U.S. Pat.No. 7,148,630 issued Dec. 12, 2006) which is a continuation of U.S.application Ser. No. 09/850,650, filed on May 7, 2001 (now U.S. Pat. No.6,714,178 issued Mar. 30, 2004), all of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an electronic display (electro opticaldevice) formed by fabricating an EL (electro luminescence) element on asubstrate. Particularly, the present invention relates to a displaydevice using a semiconductor element (an element employing asemiconductor thin film), and furthermore to electronic equipment usingthe EL display device as a display portion.

2. Description of the Related Art

In recent years, remarkable progress has been made in a technique forforming thin film transistors (hereinafter referred to as TFTs) on asubstrate, and developing the application of TFTs to an active matrixdisplay device is proceeding. TFTs using a polycrystalline semiconductorfilm such as poly-silicon film, in particular, have a higher electricfield effect mobility (also referred to as mobility) than that ofconventional TFTs using an amorphous semiconductor film such as anamorphous silicon film, and hence a high speed operation may be made.Thus, control of pixels, which in the past has been controlled by adriver circuit external to a substrate, can now be made by drivercircuits formed on the same substrate as the pixels.

Various merits such as reduction of manufacturing cost, miniaturizationof a display device, and increase of yield and reduction of throughputcan be obtained from such an active matrix display device using apolycrystalline semiconductor film by forming various circuits andelements on the same substrate.

A research on active matrix EL display devices having an EL element as aself-luminous element is being actively carried out. The EL displaydevice is also referred to as an organic EL display (OLED) or an organiclight emitting diode (OLED).

The EL element has a structure composed of a pair of electrodes (anodeand cathode) and an EL layer, which is usually a laminate structure,sandwiched therebetween. The laminate structure (hole transportinglayer, light-emitting layer, electron transporting layer) proposed byTang, et al. from Eastman Kodak Company can be cited as a typicallaminate structure of the EL layer. This laminate structure has anextremely high luminescence efficiency, and therefore at present, mostof the EL display devices in which research and development areproceeding adopt this laminate structure of the EL layer.

In addition to the above laminate structure, a structure in which thelayers are laminated on the anode in the order of a hole injectionlayer, a hole transporting layer, a light-emitting layer, and anelectron transporting layer or in the order of a hole injection layer, ahole transporting layer, a light-emitting layer, an electrontransporting layer, and an electron injection layer may be formed. Thelight-emitting layer may be doped with a fluorescent pigment or thelike.

The EL layer is a generic term in the present specification indicatingall the layers formed between the cathode and anode. Therefore, theabove-mentioned hole injection layer, the hole transporting layer, thelight-emitting layer, the electron transporting layer, the electroninjection layer, etc. are all included in the EL layer.

If a predetermined voltage from the pair of electrodes is applied to theEL layer having the above structure, a re-coupling of carriers in thelight-emitting layer occurs to thereby emit light. It is to be notedthat throughout the present specification, the emission of light by theEL element is called a drive by the EL element. In addition, aluminescent element formed of the anode, the EL layer, and the cathodeis called the EL element in the present specification.

It is to be noted that an EL element as used herein includes oneutilizing light emission from singlet excited state (fluorescence) andone utilizing light emission from triplet excited state(phosphorescence).

A driving method of the analog system (analog drive) can be cited as adriving method of the EL display device. An explanation regarding theanalog drive of the EL display device will be made with references toFIGS. 18 and 19.

FIG. 18 is a diagram showing the structure of a pixel portion 1800 inthe EL display device having the analog drive. A gate signal line (G1 toGy) for inputting a selected signal from a gate signal line drivercircuit is connected to a gate electrode of a switching TFT 1801 of therespective pixels. As to a source region and a drain region of theswitching TFT 1801 of the respective pixels, one is connected to asource signal line (also called data signal line) (S1 to Sx) forinputting an analog video signal whereas the other is connected to agate electrode of a driver TFT 1804 and a capacitor 1808 of each of thepixels, respectively.

A source region and a drain region of the driver TFT 1804 of each of thepixels is connected to power supply lines (V1 to Vx), and a drain regionthereof is connected to an EL element 1806, respectively. An electricpotential of the power supply lines (V1 to Vx) is called a power supplypotential. Each of the power supply lines (V1 to Vx) is connected to thecapacitor 1808 of the respective pixels.

The EL element 1806 is composed of an anode, a cathode, and an EL layersandwiched therebetween. When the anode of the EL element 1806 isconnected to either the source region or the drain region of the ELdriver TFT 1804, the anode and the cathode of the EL element 1806 becomea pixel electrode and an opposing electrode, respectively.Alternatively, if the cathode of the EL element 1806 is connected toeither the source region or the drain region of the EL driver TFT 1804,then the anode of the EL element 1806 becomes the opposing electrodewhereas the cathode thereof becomes the pixel electrode.

It is to be noted that the electric potential of an opposing electrodeis herein referred to as opposing potential. It is to be noted that apower supply for giving opposing potential to an opposing electrode isherein referred to as an opposing power supply. The difference betweenthe electric potential of a pixel electrode and the electric potentialof an opposing electrode is the EL driving voltage, which is applied tothe EL layer.

FIG. 19 is a timing chart illustrating the EL display shown in FIG. 18when it is being driven by the analog system. A period from theselection of one gate signal line to the selection of a next differentgate signal line is called a 1 line period (L). In addition, a periodfrom the display of one image to the display of the next imagecorresponds to a 1 frame period (F). In the case of the EL displaydevice of FIG. 18, there are y number of the gate signal lines and thusa y number of line periods (L1 to Ly) are provided in 1 frame period.

Because the number of line periods in 1 frame period increases asresolution becomes higher, driver circuits must be driven at a highfrequency.

First of all, the power supply lines (V1 to Vx) are held at a constantpower supply potential, and the opposing electric potential that is theelectric potential of the opposing electrode is also held at a constantelectric potential. There is a difference in electric potential betweenthe opposing electric potential and the power supply potential to adegree that the EL element can emit light.

A selected signal from the gate signal line driver circuit is inputtedto the gate signal line G1 in the first line period (L1). An analogvideo signal is then sequentially inputted to source signal lines (S1 toSx). All the switching TFTs connected to the gate signal line G1 areturned on to thereby input the analog video signal that is inputted tothe source signal lines to the gate electrode of the driver TFT throughthe switching TFT.

The amount of electric current through the channel forming region of aTFT for driving is controlled by its gate voltage.

Here, description is made with regard to, by way of example, a casewhere the source regions of the TFTs for driving are connected to thepower supply lines and the drain regions of the TFTs for driving areconnected to the EL elements.

Since the source regions of the TFTs for driving are connected to thepower supply lines, the same electric potential is inputted to therespective pixels of the pixel portion. At this point, when an analogsignal is inputted to a source signal line, the difference between theelectric potential of the signal voltage and the electric potential ofthe source region of the TFT for driving becomes the gate voltage. Theelectric current through an EL element depends on the gate voltage ofthe TFT for driving. Here, the brightness of the emitted light from anEL element is proportional to the electric current between theelectrodes of the EL element. In this way, the EL elements emit lightunder the control of the voltage of analog video signals.

The operation described in the above is repeated. When input of analogvideo signals to the source signal lines (S1-Sx) is completed, the firstline period (L1) ends. It is to be noted that the period until the inputof analog video signals to the source signal lines (S1-Sx) is completedcombined with a horizontal retrace line period may be a one line period.Then, in the second line period (L2) that follows, a selection signal isinputted to the gate signal line G2. Similarly to the case of the firstline period (L1), analog video signals are sequentially inputted to thesource signal lines (S1-Sx).

When selection signals are inputted to all the gate signal lines(G1-Gy), all the line periods (L1-Ly) end. When all the line periods(L1-Ly) end, one frame period ends. In one frame period, all the pixelscarries out display to form one image. It is to be noted that all theline periods (L1-Ly) combined with a vertical retrace line period may bea one frame period.

As described in the above, the amount of light emitted from an ELelement is controlled by an analog video signal, and, by controlling theamount of light emission, gradation display is carried out. This is aso-called analog driving method, where gradation display is carried outby changing the voltage of analog video signals inputted to the sourcesignal lines.

FIG. 20 is a graph illustrating characteristics of a TFT for driving.401 is referred to as Id-Vg characteristics (or an Id-Vg curve), whereinId is drain current and Vg is gate voltage. Using this graph, the amountof electric current with regard to arbitrary gate voltage can be known.

In driving an EL element, a region shown by a dotted line 402 of theabove Id-Vg characteristics is normally used. The region surrounded bythe dotted line 402 is referred to as a saturated region where the draincurrent Id greatly changes as the gate voltage Vg changes.

In the analog driving method, using the saturated region, the draincurrent of a TFT for driving is changed by changing its gate voltage.

When a TFT for switching is turned on, an analog video signal inputtedfrom a source signal line to a pixel is applied to a gate electrode of aTFT for driving. In this way, the gate voltage of the TFT for driving ischanged. Here, according to the Id-Vg characteristics illustrated inFIG. 20, the drain current with regard to a certain gate voltage isuniquely decided. In this way, predetermined drain current correspondingto the voltage of the analog video signal inputted to the gate electrodeof the TFT for driving passes through the EL element, and the EL elementemits light the amount of which corresponds to the amount of theelectric current.

In this way, the amount of light emitted from the EL element iscontrolled by an analog video signal, and, by controlling the amount oflight emission, gradation display is carried out.

Here, even when the same signal is inputted from the source signal line,the gate voltage of the TFT for driving of each pixel changes if theelectric potential of the source region of the TFT for driving changes.Here, the electric potential of the source region of the TFT for drivingis given from the power supply line. However, due to potential dropcaused by wiring resistance, the electric potential of the power supplyline changes depending on its position in the pixel portion.

In addition to the influence of the potential drop caused by wiringresistance of the power supply line in the pixel portion, there is alsoa problem of potential drop of the connection wiring portion(hereinafter referred to as a power supply line connection wiringportion) from an input portion of the power supply from the external(hereinafter referred to as an external input terminal) to the powersupply line of the pixel portion.

More specifically, depending on the length of the wiring from theposition of the external input terminal to the position of the powersupply line of the pixel portion, the electric potential of the powersupply line varies.

Here, this may not present a great problem in such a case where thewiring resistance of the power supply line is small, the display deviceis relatively small, or the amount of electric current passing throughthe power supply line is relatively small. Otherwise however, especiallywhen the display device is relatively large, the change in the electricpotential of the power supply line due to the wiring resistance becomeslarge.

In particular, as the display device becomes larger, the variation inthe distance from the external input terminal to the power supply lineof the pixel portion becomes larger, and the variation in the length ofthe wiring of the power supply line drawn-around portion becomes largeraccordingly. Therefore, the change becomes larger in the electricpotential of the power supply line due to the potential drop of thepower supply line connection portion.

The variation in the electric potential of the power supply lines due tothese factors affects the brightness of the emitted light from the ELelements of the pixels by changing the brightness of the display, andthus, is a cause of uneven display.

A specific example of such variation in the electric potential of thepower supply lines is described in the following.

As illustrated in FIG. 23, when a white or black box is displayed on adisplay, a phenomenon referred to as cross talk arises. This is aphenomenon that difference in the brightness arises over or under thebox compared with portions beside the box.

FIGS. 40 and 41 are a partial circuit diagram and a top surface view,respectively, of a pixel portion of a conventional display device wherethe phenomenon arises.

In FIG. 41, like reference numerals designate like parts in FIG. 40, andthe description thereof is omitted.

Each pixel is fouled of a TFT 4402 for switching, a TFT 4406 fordriving, a storage capacitor 4419, and an EL element 4414.

It is to be noted that, although the TFT 4402 for switching is of adouble gate structure in FIGS. 40 and 41, it may be of the otherstructures.

Cross talk arises due to the difference in electric current through theTFT 4406 for driving between each pixel over and under the box andbeside the box. The difference arises because the power supply lines V1and V2 are disposed in parallel with the source signal lines S1 and S2.

For example, as shown in FIG. 23, when a white box is displayed in apart of the display in the power supply line corresponding to the pixeldisplaying the box, since current flows through the EL element betweenthe source and the drain of the TFT for driving of the pixel displayingthe box, the potential drop due to the wiring resistance of the powersupply line is greater than that of the power supply line which suppliespower only to pixels which do not display the box. Therefore, portionsdarker than other pixels which do not display the box are generated overand under the box.

Further, in a conventional active matrix EL display device, as shown inFIG. 24, the power supply line is drawn out from one direction of thedisplay device, and power supply, signals, and the like are inputtedfrom an input portion.

Here, even if the size of the display of the display device is small, noparticular problem arises. However, as the size of the display of thedisplay device becomes larger, the current consumption increases inproportion to the area of the display.

For example, the current consumption of a display device having a20-inch display is 25 times as much as that of a display device having a4-inch display.

Therefore, the potential drop described in the above is a big problemfor a display device having a large-sized display.

Further, while the potential drop with regard to a power supply linenear the input portion (a in FIG. 24) is not so great, with regard to apower supply line far from the input portion (b in FIG. 24), since thelength of the wiring is large, the potential drop caused due to thewiring resistance is large. Therefore, voltage applied to EL elements ofpixels having TFTs for driving which are connected to the power supplyline (b in FIG. 24) is lowered to deteriorate the quality of the image.

For example, in a 20-inch display device, when the length of the wiringis 700 mm, the width of the wiring is 10 mm, and the sheet resistance is0.1 ohm, if about 1 A of current passes, the potential drop is as muchas 10 V, with which normal display is impossible.

SUMMARY OF THE INVENTION

The present invention is made in view of the above, and an object of thepresent invention is to provide an active matrix EL display devicecapable of vivid color display with multiple gradations. Another objectof the present invention is to provide a high performance electronicapparatus (electronic device) using such an active matrix EL displaydevice.

The present inventor conceived a method of alleviating potential dropdue to wiring resistance of a power supply line, in particular,potential drop due to wiring resistance at a portion where the powersupply line is drawn out.

Structures according to the present invention are described in thefollowing.

According to the present invention, a display device is provided whichcomprises a plurality of source signal lines, a plurality of gate signallines, a plurality of power supply lines, and a plurality of pixelsdisposed like a matrix, said source signal lines, said gate signallines, said power supply lines, and said pixels being on an insulatingsurface, and said plurality of pixels being formed of thin filmtransistors for switching, thin film transistors for driving, and ELelements,

characterized in that:

said display device has a plurality of drawing-out openings;

said plurality of power supply lines are drawn around to said pluralityof drawing-out openings;

electric potential is given to said plurality of power supply lines atsaid plurality of drawing-out openings; and

said drawing-out openings are provided in at least two directions ofsaid display device.

According to the present invention, a display device is provided whichcomprises a plurality of source signal lines, a plurality of gate signallines, a plurality of power supply lines, and a plurality of pixelsdisposed like a matrix, said source signal lines, said gate signallines, said power supply lines, and said pixels being on an insulatingsurface, and said plurality of pixels being formed of thin filmtransistors for switching, thin film transistors for driving, and ELelements,

characterized in that:

said display device has a drawing-out opening;

said drawing-out opening has a plurality of external input terminals;

five to fifty of said plurality of power supply lines are collectedtogether in one unit and are drawn around to said plurality of externalinput terminals; and

electric potential is given to said plurality of power supply lines atsaid plurality of external input terminals.

According to the present invention, a display device is provided whichcomprises a plurality of source signal lines, a plurality of gate signallines, a plurality of power supply lines, and a plurality of pixelsdisposed like a matrix, said source signal lines, said gate signallines, said power supply lines, and said pixels being on an insulatingsurface, and said plurality of pixels being formed of thin filmtransistors for switching, thin film transistors for driving, and ELelements,

characterized in that:

said display device has an external input terminal;

said plurality of power supply lines are drawn around to said externalinput terminal; and

an electric potential is given to said plurality of power supply linesthrough said external input terminal by a feedback amplifier in afeedback loop.

A display device may be characterized in that said plurality of powersupply lines are disposed like a matrix.

A display device may be characterized in that said plurality of powersupply lines are formed of a wiring layer forming said source signallines and a wiring layer forming said gate signal lines.

A display device may be characterized in that said plurality of powersupply lines are formed of a wiring layer different from a wiring layerforming said source signal lines, and a wiring layer forming said gatesignal lines.

A display device may be characterized in that said plurality of powersupply lines are formed of a wiring layer different from a wiring layerforming said gate signal lines, and a wiring layer forming said sourcesignal lines.

A display device may be characterized in that said plurality of powersupply lines are formed of a wiring layer different from both a wiringlayer forming said gate signal lines and a wiring layer forming saidsource signal lines.

A display device may be characterized in that the number of saidplurality of power supply lines in a column direction is smaller thanthe number of said plurality of pixels in a column direction.

A display device may be characterized in that the number of saidplurality of power supply lines in a row direction is smaller than thenumber of said plurality of pixels in a row direction.

A display device may be characterized in that a diagonal line of adisplay portion of said display device is 20 inch or longer.

A personal computer, a telereceiver, a video camera, an imagereproduction device, a heat mount display or a portable informationterminal may be characterized by applying the display device.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 shows the drawing out openings of the display device of thepresent invention;

FIG. 2 shows the circuit structure of the pixel portion of the displaydevice of the present invention;

FIG. 3 shows the top view of the pixel portion of the display device ofthe present invention;

FIG. 4 shows the shape of the drawing out port of the power sourcesupply line of the display device of the present invention;

FIG. 5 shows the driving method of the display device of the presentinvention;

FIG. 6A shows the top view of the display device of the presentinvention and FIG. 6B shows the cross section view of the display deviceof the present invention;

FIG. 7A shows the top view of the display device of the presentinvention and FIG. 7B shows the cross section view of the display deviceof the present invention;

FIG. 8 shows the cross section view of the display device of the presentinvention;

FIG. 9 shows the cross section view of the display device of the presentinvention;

FIG. 10 shows the circuit diagram of the pixel portion of the displaydevice of the present invention;

FIGS. 11A to 11E show the manufacturing process of the display device ofthe present invention;

FIGS. 12A to 12D show the manufacturing process of the display device ofthe present invention;

FIGS. 13A to 13D show the manufacturing process of the display device ofthe present invention;

FIGS. 14A to 14C show the manufacturing process of the display device ofthe present invention;

FIG. 15 shows the circuit diagram of the source signal side drivercircuit of the display device of the present invention;

FIG. 16 shows the top view of the latch of the display device of thepresent invention;

FIGS. 17A to 17F show the electrical appliance using the display deviceof the present invention;

FIG. 18 shows the circuit diagram of the pixel portion of theconventional display device;

FIG. 19 shows the diagram of the timing chart showing the driving methodof the display device;

FIG. 20 shows the diagram of a Id-Vg characteristic of a TFT;

FIG. 21A shows the top view of the display device of the presentinvention and FIG. 21 B shows the cross section of the display device ofthe present invention;

FIG. 22 shows the cross section of the display device of the presentinvention;

FIG. 23 shows an example of the generation of cross talk;

FIG. 24 shows the diagram of a drawing out port of the display device ofthe present invention;

FIGS. 25A to 25E show the manufacturing process of the display device ofthe present invention;

FIGS. 26A to 26E show the manufacturing process of the display device ofthe present invention;

FIGS. 27A to 27D show the manufacturing process of the display device ofthe present invention;

FIGS. 28A to 28D show the manufacturing process of the display device ofthe present invention;

FIGS. 29A to 29C show the manufacturing process of the display device ofthe present invention;

FIGS. 30A to 30E show the manufacturing process of the display device ofthe present invention;

FIGS. 31A to 31D show the manufacturing process of the display device ofthe present invention;

FIGS. 32A to 32D show the manufacturing process of the display device ofthe present invention;

FIGS. 33A to 33D show the manufacturing process of the display device ofthe present invention;

FIG. 34 shows the manufacturing process of the display device of thepresent invention;

FIG. 35 shows the shape of the drawing out port of the power sourcesupply line of the conventional display device of the present invention;

FIG. 36 shows the cross section view of the display device of thepresent invention;

FIG. 37 shows the cross section view of the display device of thepresent invention;

FIG. 38 shows the cross section view of the display device of thepresent invention;

FIG. 39 shows the cross section view of the display device of thepresent invention;

FIG. 40 shows the circuit diagram of the pixel portion of theconventional display device;

FIG. 41 shows the top view of the pixel portion of the conventionaldisplay device;

FIG. 42 shows the top view of the pixel portion of the display device ofthe present invention;

FIG. 43 shows the circuit diagram of the pixel portion of the displaydevice of the present invention;

FIG. 44 shows the top view of the pixel portion of the display device ofthe present invention; and

FIG. 45 is a diagram showing the gray-scale characteristics of thedisplay device of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Structures of display devices according to the present invention are nowdescribed in the following.

Embodiment Mode 1

Power supply lines of a pixel portion is drawn out to the external notin one direction but in a plurality of directions.

Embodiment Mode 1 is described with reference to FIG. 1.

As illustrated in FIG. 1, the power supply lines are drawn out in twodirections, i.e., from a power supply line input portion 1 and a powersupply line input portion 2.

An input portion as used herein shall mean a portion formed of aplurality of external input terminals and through which power supplypotential, picture signals, and the like are inputted from the externalto the display device.

By drawing out the power supply lines in two directions of the displaydevice in this way, compared with a case where the power supply linesare drawn out in one direction, the length of the wiring from the powersupply lines of the pixel portion to the external input terminals can beshorter and the variation in the length of the wiring can be decreased.

By the above structure, the influence of the potential drop at thedrawn-around portion of the power supply lines around the pixel portioncan be decreased.

Embodiment Mode 2

In the present embodiment mode, a small number of wirings of an inputportion of power supply lines are collected together in a unit and therespective units are drawn out to a plurality of external inputterminals which are not next to each other and which are at respectiveinput portions.

A structure of the present embodiment mode is illustrated in FIG. 4.

In the present embodiment mode, compared with a case where all the powersupply lines of a pixel portion are collected together in one unit to bedrawn out to one external input terminal, the length of the wiring fromthe respective collected power supply lines to the external inputterminals can be shorter and the variation in the length of the wiringcan be decreased.

More specifically, the difference in length between wirings a and b inFIG. 4 is greatly decreased compared with the difference in lengthbetween wirings a and b in FIG. 35.

By the above structure, the influence of the potential drop at thedrawn-around portion of the power supply lines around the pixel portioncan be decreased.

Embodiment Mode 3

As described in the above, the amount of electric current through powersupply lines can be large in a large-sized display device. In such acase, the influence of potential drop due to wiring resistance between apixel region and external input terminals is not negligible.

One countermeasure for this would be increasing in advance the potentialof an external power supply. However, since electric current through thepower supply lines changes depending on what is displayed, it is notdesirable to uniformly increase the potential of the external powersupply. Therefore, in the present embodiment mode, it is proposed to usea feedback amplifier and to include wiring causing potential drop in afeedback loop.

As illustrated in FIG. 5, an external input terminal is connected to anoutput of a feedback amplifier. Voltage to be applied to power supplylines is inputted to a noninverting input terminal (+) of a feedbackamplifier. Electric potential of the power supply lines of the pixelportion is monitored and is applied to an inverting input terminal (−).According to the principle of the feedback amplifier, the noninvertinginput terminal and the inverting input terminal are operated to be atthe same electric potential, and thus, electric potential higher by thepotential drop is outputted from an output terminal of the feedbackamplifier. As described in the above, potential compensation is carriedout to cancel the gap in the electric potential.

When the wiring resistance of the power supply line input portion is Rand the electric current is i, potential drop of Ri arises. However, atthe monitor terminal, since almost no electric current passes throughthe monitor terminal, no potential drop arises.

Note that the feedback amplifier comprising an external IC is formedover an external substrate after forming a panel having the pixelregion.

Embodiment Mode 4

FIG. 2 is a circuit diagram illustrating a structure of a pixel portionaccording to the present invention.

Each pixel of the pixel portion is formed of a TFT 4402 for switching, aTFT 4406 for driving, a storage capacitor 4419, and an EL element 4414.Power supply lines (VX1-VXn and VY1-VYn) are disposed not only in adirection in parallel with source signal lines (S1-Sn) but also in adirection perpendicular to them. Therefore, voltage is supplied toeither a source region or a drain region of the TFT 4406 for driving ofthe pixel from the respective directions. Since electric current throughthe EL element 4414 is supplied not only from the direction in parallelwith the source signal lines S1-Sn but from the direction perpendicularto them, occurrence of conventional cross talk can be suppressed.

Here, the power supply lines are shared between pixels next to eachother. This can decrease the area occupied by the power supply lines inthe respective pixels. Therefore, the opening ratio can be improved evenwith regard to a pixel having a structure where power supply lines aredisposed both vertically and horizontally (like a matrix).

Embodiment Modes 1 to 4 can be freely combined with each other to beimplemented.

EMBODIMENTS

Embodiments of the present invention are described in the following.

Embodiment 1

FIG. 4 illustrates an example where a small number of power supply linesare collected together in one unit and are connected to an externalinput terminal, which is described in Embodiment 2.

Since the potential drop becomes larger as the size of the displaybecomes larger, it is necessary to make the wirings as short as possiblewhich draw out the power supply lines. According to the presentinvention, a small number of power supply lines are collected togetherin one unit, and are outputted to an adjacent external input terminal.

In the example illustrated in FIG. 4, a small number of power supplylines are collected together in one unit, and are connected to anexternal input terminal through a driver region. In this way, the wiringresistance is decreased.

It is desirable that about five to fifty power supply lines arecollected together in one unit.

Embodiment 2

FIG. 3 is a top view of a part (four pixels) of the pixel portion of thecircuit diagram illustrated in FIG. 2 as an embodiment of the presentinvention.

It is to be noted that like reference numerals designate like parts inFIG. 2.

Each pixel is formed of a TFT 4402 for switching, a TFT 4406 fordriving, a capacitor 4419, and an EL element 4414. In this embodiment,power supply lines VX1 and VX2 are disposed in parallel with gate signallines G1 and G2 using a wiring material similar to that of the gatesignal lines G1 and G2. The power supply lines VX1 and VX2 are connectedthrough contact holes to conventional power supply lines VY1 and VY2 inparallel with the source signal lines S1 and S2.

A structure where power supply lines in parallel with the gate signallines are formed using a wiring layer forming the gate signal lines asthe present embodiment is herein referred to as Embodiment 1 of a pixelstructure according to the present invention.

In Embodiment 1 of the pixel structure according to the presentinvention, compared with a conventional case where the pixelsillustrated in FIGS. 40 and 41 are actually formed, matrix-like powersupply lines can be formed without increasing the number of masks.

The present embodiment can be freely combined with Embodiment 1 to beimplemented.

Embodiment 3

In the present embodiment, a case where power supply lines are sharedbetween pixels next to each other described in Embodiment 4 is describedwith reference to FIGS. 10 and 42-44.

It is to be noted that, in the present embodiment, G1-G4 are gatewirings (a part of gate signal lines) of a TFT 4402 for switching, S1-S3are source wirings (a part of source signal lines) of the TFT 4402 forswitching, 4406 is a TFT for driving, 4414 is an EL element, VY1-VY2 arepower supply lines in parallel with the source wirings, VX1-VX2 arepower supply lines in parallel with the gate wirings, and 4419 is astorage capacitor.

FIG. 10 illustrates a case where the power supply lines VY1 and VX1 areshared between two pixels next to each other. It is characteristic thatthe two pixels are formed so as to be symmetrical with respect to thepower supply lines VY1 and VX1. In this case, since the number of thepower supply lines can be decreased, the aperture ratio of the displaydevice can be improved and the pixel portion can be made highly precise.

FIG. 42 is a top view of FIG. 10. It is to be noted that like referencenumerals designate like parts in FIG. 10, and the description thereof isomitted.

FIG. 43 illustrates another embodiment of the present invention. In thepresent Embodiment, power supply lines in an X direction are notdisposed with regard to all pixel rows, and are 1/n of the number of thepixel rows, wherein n is a natural number which is 2 or larger. Here, acase where n=3 is illustrated.

FIG. 44 is a top view of FIG. 43. It is to be noted that like referencenumerals designate like parts in FIG. 43, and the description thereof isomitted.

The present embodiment can be freely combined with Embodiments 1 and 2to be implemented.

Embodiment 4

Though, according to the present invention, both n-channel type TFTs andp-channel type TFTs can be used as TFTs for driving of pixels, in caseanodes of EL elements are pixel electrodes while their cathodes areopposing electrodes, it is preferable that the TFTs for driving arep-channel type TFTs. On the contrary, in case the anodes of the ELelements are the opposing electrodes while their cathodes are the pixelelectrodes, it is preferable that the TFTs for driving are n-channeltype TFTs.

The present embodiment can be freely combined with Embodiments 1 to 3 tobe implemented.

Embodiment 5

An example of manufacturing an EL display device of the presentinvention is explained in this embodiment.

FIG. 6A is a top view of an EL display device using the presentinvention. FIG. 6B shows a cross sectional view which is cut along theline A-A′ in FIG. 6A

In FIG. 6A, reference numeral 4010 is a substrate, reference numeral4011 is a pixel portion, reference numerals 4012 a and 4012 b are sourcesignal line driver circuits, and reference numerals 4013 a and 4013 bare gate signal line driver circuits. Each driver circuit is connectedto external equipment, through an FPC 4017, via wirings 4014 a, 4014 b,4015 and 4016.

A cover member 6000, a sealing material (also referred to as a housingmaterial) 7000, and an airtight material (a second sealing material)7001 are formed so as to enclose at least the pixel portion 4011,preferably the driver circuits 4012 a, 4012 b, 4013 a, and 4013 b andthe pixel portion 4011, at this point.

Further, FIG. 6B is a cross sectional structure of the EL display deviceof the Embodiment 5. A driver circuit TFT 4022 (note that a CMOS circuitin which an n-channel TFT and a p-channel TFT are combined is shown inthe figure here), a pixel portion TFT 4023 (note that only a driver TFTfor controlling the current flowing to an EL element is shown here) areformed on a base film 4021 on a substrate 4010. The TFTs may be formedusing a known structure (a top gate structure or a bottom gatestructure).

After the driver circuit TFT 4022 and the pixel portion TFT 4023 arecompleted, a pixel electrode 4027 is formed on an interlayer insulatingfilm (leveling film) 4026 made from a resin material. The pixelelectrode 4027 is formed from a transparent conductive film forelectrically connecting to a drain of the pixel TFT 4023. An indiumoxide and tin oxide compound (referred to as ITO) or an indium oxide andzinc oxide compound can be used as the transparent conductive film. Aninsulating film 4028 is formed after forming the pixel electrode 4027,and an open portion is formed on the pixel electrode 4027.

An EL layer 4029 is formed next. The EL layer 4029 may be formed havinga lamination structure, or a single layer structure, by freely combiningknown EL materials (such as a hole injecting layer, a hole transportinglayer, a light emitting layer, an electron transporting layer, and anelectron injecting layer). A known technique may be used to determinewhich structure to use. Further, EL materials exist as low molecularweight materials and high molecular weight (polymer) materials.Evaporation is used when using a low molecular weight material, but itis possible to use easy methods such as spin coating, printing, and inkjet printing when a high molecular weight material is employed.

In this embodiment, the EL layer is formed by evaporation using a shadowmask. Color display becomes possible by forming emitting layers (a redcolor emitting layer, a green color emitting layer, and a blue coloremitting layer), capable of emitting light having different wavelengths,for each pixel using a shadow mask. In addition, methods such as amethod of combining a charge coupled layer (CCM) and color filters, anda method of combining a white color light emitting layer and colorfilters may also be used. Of course, the EL display device can also bemade to emit a single color of light.

After forming the EL layer 4029, a cathode 4030 is formed on the ELlayer. It is preferable to remove as much as possible any moisture oroxygen existing in the interface between the cathode 4030 and the ELlayer 4029. It is therefore necessary to use a method of continuouslydepositing the EL layer 4029 and the cathode 4030 in vacuum, or a methodof depositing the EL layer 4029 in an inert gas atmosphere anddepositing the cathode 4030 without exposure to the atmosphere. Theabove film deposition becomes possible in this embodiment by using amulti-chamber method (cluster tool method) film deposition apparatus.

Note that a lamination structure of a LiF (lithium fluoride) film and anAl (aluminum) film is used in this embodiment as the cathode 4030.Specifically, a 1 nm thick LiF (lithium fluoride) film is formed byevaporation on the EL layer 4029, and a 300 nm thick aluminum film isformed on the LiF film. An MgAg electrode which is a known cathodematerial, may of course also be used. The wiring 4016 is then connectedto the cathode 4030 in a region denoted by reference numeral 4031. Thewiring 4016 is an electric power supply line for imparting apredetermined voltage to the cathode 4030, and is connected to the FPC4017 through a conducting paste material 4032.

In order to electrically connect the cathode 4030 and the wiring 4016 inthe region denoted by reference numeral 4031, it is necessary to form acontact hole in the interlayer insulating film 4026 and the insulatingfilm 4028. The contact holes may be formed at the time of etching theinterlayer insulating film 4026 (when forming a contact hole for thepixel electrode) and at the time of etching the insulating film 4028(when forming the opening portion before forming the EL layer). Further,when etching the insulating film 4028, etching may be performed all theway to the interlayer insulating film 4026 at one time. A good contacthole can be formed in this case, provided that the interlayer insulatingfilm 4026 and the insulating film 4028 are the same resin material.

A passivation film 6003, a filler material 6004, and the cover member6000 are formed covering the surface of the EL element thus made.

In addition, the sealing material 7000 is formed between the covermember 6000 and the substrate 4010, so as to surround the EL elementportion, and the airtight material (the second sealing material) 7001 isformed on the outside of the sealing material 7000.

The filler material 6004 functions as an adhesive for bonding the covermember 6000 at this point. PVC (polyvinyl chloride), epoxy resin,silicone resin, PVB (polyvinyl butyral), and EVA (ethylene vinylacetate) can be used as the filler material 6004. If a drying agent isformed on the inside of the filler material 6004, then it can continueto maintain a moisture absorbing effect, which is preferable.

Further, spacers may be contained within the filler material 6004. Thespacers may be a powdered substance such as BaO, giving the spacersthemselves the ability to absorb moisture.

When using spacers, the passivation film 6003 can relieve the spacerpressure. Further, a film such as a resin film can be formed separatelyfrom the passivation film to relieve the spacer pressure.

Furthermore, a glass plate, an aluminum plate, a stainless steel plate,an FRP (fiberglass-reinforced plastics) plate, a PVF (polyvinylfluoride) film, a Mylar film, a polyester film, and an acrylic film canbe used as the cover member 6000. Note that if PVB or EVA is used as thefiller material 6004, it is preferable to use a sheet with a structurein which several tens of μm of aluminum foil is sandwiched by a PVF filmor a Mylar film.

However, depending upon the light emission direction from the EL element(the light radiation direction), it is necessary for the cover member6000 to have light transmitting characteristics.

Further, the wiring 4016 is electrically connected to the FPC 4017through a gap between the sealing material 7000, the airtight material7001 and the substrate 4010. Note that although an explanation of thewiring 4016 has been made here, the wirings 4014 a, 4014 b and 4015 arealso electrically connected to the FPC 4017 by similarly passingunderneath the sealing material 7000, the airtight material 7001 and thesubstrate 4010.

In this embodiment, the cover member 6000 is bonded after forming thefiller material 6004, and the sealing material 7000 is attached so as tocover the lateral surfaces (exposed surfaces) of the filler material6004, but the filler material 6004 may also be formed after attachingthe cover member 6000 and the sealing material 7000. In this case, afiller material injection opening is formed through a gap formed by thesubstrate 4010, the cover member 6000, and the sealing material 7000.The gap is set into a vacuum state (a pressure equal to or less than10⁻² Torr), and after immersing the injection opening in the tankholding the filler material, the air pressure outside of the gap is madehigher than the air pressure within the gap, and the filler materialfills the gap.

The present embodiment can be freely combined with Embodiments 1 to 4 tobe implemented.

Embodiment 6

An example of an EL display device in accordance with the presentinvention, manufactured in a form different from that of Embodiment 5according to the present invention, will be described with reference toFIGS. 7A and 7B. It is to be noted that like reference numeralsdesignate like parts in FIGS. 6A and 6B, and the description thereof isomitted.

FIG. 7A is a top view of the EL display device of Embodiment 6, and FIG.7B is a cross-sectional view taken along the line A-A′ in FIG. 7A.

In accordance with Embodiment 5, a passivation film 6003 is formed bycovering the surface of an EL element.

Further, a filler material 6004 is provided so as to cover the ELelement. The filler material 6004 also functions as an adhesive forbonding a cover member 6000. As the filler material 6004, polyvinylchloride (PVC), epoxy resin, silicone resin, polyvinyl butyral (PVB) orethylene-vinyl acetate (EVA) may be used. Preferably, a desiccant isprovided in the filler material 6004 to maintain a moisture absorbingeffect.

The filler material 6004 may also contain a spacer. The spacer may beparticles of BaO or the like such that the spacer itself has a moistureabsorbing effect.

If a spacer is provided, the passivation film 6003 can reduce theinfluence of the spacer pressure. A resin film or the like may also beprovided independently of the passivation film to reduce the influenceof the spacer pressure.

As the cover member 6000, a glass sheet, an aluminum sheet, a stainlesssteel sheet, a fiberglass-reinforced plastics (FRP) sheet, polyvinylfluoride (PVF) film, Mylar film, polyester film, acrylic film, or thelike may be used. If PVB or EVA is used as the filler material 6004, itis preferable to use a sheet having a structure in which an aluminumfoil having a thickness of several tens of μm is sandwiched between PVFfilms or Mylar films.

Some setting of the direction of luminescence from the EL element (thedirection of light emission) necessitates making the cover member 6000transparent.

Next, the cover member 6000 is bonded by using the filler material 6004.Thereafter, a frame member 6001 is attached so as to cover side surfaces(exposed surfaces) formed by the filler material 6004. The frame member6001 is bonded by a sealing material 6002 (functioning as an adhesive).Preferably, a photo-setting resin is used as sealing material 6002.However, a thermosetting resin may be used if the heat resistance of theEL layer is high enough to allow use of such a resin. It is desirablethat the sealing material 6002 has such properties as to inhibitpermeation of moisture and oxygen as effectively as possible. Adesiccant may be mixed in the sealing material 6002.

Also wiring 4016 is electrically connected to a flexible printed circuit(FPC) 4017 by being passed through a gap between the sealing material6002 and the substrate 4010. While the electrical connection of thewiring 4016 is described, other wirings 4014 a, 4014 b, and 4015 arealso connected electrically to the FPC 4017 by being passed through thegap between the sealing material 6002 and the substrate 4010.

In Embodiment 6, after the filler material 6004 has been provided, thecover member 6000 is bonded and the frame member 6001 is attached so asto cover the side surfaces (exposed surfaces) of the filler material6004. However, the filler material 6004 may be provided after attachmentof the cover member 6000 and the frame member 6001. In such a case, afiller injection hole is formed which communicates with a gap formed bythe substrate 4010, the cover member 6000 and the frame member 6001. Thegap is evacuated to produce a vacuum (at 10⁻² Torr or lower), theinjection hole is immersed in the filler material in a tank, and the airpressure outside the gap is increased relative to the air pressure inthe gap, thereby filling the gap with the filler material.

The present embodiment can be freely combined with Embodiments 1 to 5 tobe implemented.

Embodiment 7

Here, FIG. 8 illustrates a further detailed structure in cross sectionof a pixel portion of an EL display device.

It is to be noted that the present embodiment illustrates a pixelstructure of Embodiment 1 of a pixel structure according to the presentinvention which corresponds to a case where power supply lines inparallel with source signal lines are formed in a layer forming thesource signal lines and power supply lines in parallel with gate signallines are formed in a layer forming the gate signal lines.

In FIG. 8, a TFT 3502 for switching provided on a substrate 3501 is ann-channel type TFT formed conventionally. In the present embodiment, theTFT 3502 is of a double gate structure having gate electrodes 39 a and39 b. By adopting the double gate structure, two TFTs are substantiallyconnected in series, and thus, there is an advantage that an off currentvalue can be decreased. It is to be noted that, though the double gatestructure is adopted in the present embodiment, a single gate structure,a triple gate structure, or a multiple gate structure having more thanthree gates may also be adopted. Further, a p-channel type TFT formedconventionally may also be used.

In the present embodiment, a TFT 3503 for driving is an n-channel typeTFT formed conventionally. A gate electrode 37 of the TFT 3503 fordriving is electrically connected to a drain wiring 35 of the TFT 3502for switching via a wiring 36. 34 is a source signal line.

Since the TFT for driving is an element for controlling the amount ofelectric current through the EL element, a lot of electric currentpasses through it, and thus, it is highly liable to deterioration due toheat or due to hot carrier. Therefore, a structure where an LDD regionis provided on the side of a drain of the TFT for driving so as tooverlap the gate electrode through a gate insulating film is quiteeffective.

Further, a single gate structure of the driver TFT 3503 is shown in thefigures in this embodiment, but a multi-gate structure in which aplurality of TFTs are connected in series may also be used. In addition,a structure in which a plurality of TFTs are connected in parallel,effectively partitioning into a plurality of channel forming regions,and which can perform radiation of heat with high efficiency, may alsobe used.

Further, a source wiring 40 is connected to a power supply line 38formed in a layer forming the gate electrodes 37 ad 39, and constantvoltage is always applied to the source wiring 40. Here, a power supplyline is formed also in a layer forming the source wiring 40 and thesource signal line 34, and is electrically connected through a contacthole to the power supply line 38, though not shown in the figure.

A first passivation film 41 is formed on the switching TFT 3502 and thedriver TFT 3503, and a leveling film 42 comprising an insulating resinfilm is formed on the first passivation film 41. It is extremelyimportant to level the step due to the TFTs using the leveling film 42.An EL layer formed later is extremely thin, so there are cases in whichdefective light emissions occur. Therefore, to form the EL layer with aslevel a surface as possible, it is preferable to perform leveling beforeforming a pixel electrode.

Furthermore, reference numeral 43 denotes a pixel electrode (EL elementcathode in this case) made from a conducting film with highreflectivity, and this is electrically connected to a drain region ofthe driver TFT 3503. It is preferable to use a low resistance conductingfilm, such as an aluminum alloy film, a copper alloy film, and a silveralloy film, or a laminate of such films. Of course, a laminationstructure with another conducting film may also be used.

In addition, a light emitting layer 45 is formed in the middle of agroove (corresponding to a pixel) formed by banks 44 a and 44 b, whichare formed by insulating films (preferably resins). Note that only onepixel is shown in the figures here, but the light emitting layer may bedivided to correspond to each of the colors R (red), G (green), and B(blue). A π conjugate polymer material is used as an organic ELmaterial. Polyparaphenylene vinylenes (PPVs), polyvinyl carbazoles(PVKs), and polyfluoranes can be given as typical polymer materials.

Note that there are several types of PPV organic EL materials, andmaterials recorded in Shenk, H., Becker, H., Gelsen, O., Kluge, E.,Kreuder, W., and Spreitzer, H., “Polymers for Light Emitting Diodes”,Euro Display Proceedings, 1999, pp. 33-7, and in Japanese PatentApplication Laid-open No. Hei 10-92567, for example, may be used.

As specific light emitting layers, cyano-polyphenylene vinylene may beused as a red light emitting layer, polyphenylene vinylene may be usedas a blue light emitting layer, and polyphenylene vinylene orpolyalkylphenylene may be used as a red light emitting layer. The filmthickness may be between 30 and 150 nm (preferably between 40 and 100nm).

However, the above example is one example of the organic EL materialswhich can be used as luminescence layers, and it is not necessary tolimit use to these materials. An EL layer may be formed by freelycombining light emitting layers, electric charge transporting layers,and electric charge injecting layers.

For example, embodiment 4 shows an example of using a polymer materialas a light emitting layer, but a low molecular weight organic ELmaterial may also be used. Further, it is possible to use inorganicmaterials such as silicon carbide, as an electric charge transportinglayer or an electric charge injecting layer. Known materials can be usedfor these organic EL materials and inorganic materials.

A laminate structure EL layer, in which a hole injecting layer 46 madefrom PEDOT (polythiophene) or PAni (polyaniline) is formed on the lightemitting layer 45, is used in embodiment 4. An anode 47 is then formedon the hole injecting layer 46 from a transparent conductive film. Thelight generated by the light emitting layer 45 is radiated toward theupper surface (opposite the direction to the substrate 3501 where TFT isformed) in this embodiment, and therefore the anode must have aconductive property and be formed of a material having a property ofbeing transparent to light. An indium oxide and tin oxide compound, oran indium oxide and zinc oxide compound can be used as the transparentconductive film. However, because it is formed after forming the lowheat resistance light emitting and hole injecting layers, it ispreferable to use a material which can be deposited at as low atemperature as possible.

An EL element 3505 is complete at the point where the anode 47 isformed. Note that what is called the EL element 3505 here is formed bythe pixel electrode (anode) 43, the light emitting layer 45, the holeinjecting layer 46, and the anode 47. The pixel electrode 43 is nearlyequal in area to the pixel, and consequently the entire pixel functionsas an EL device. Therefore, the light emitting efficiency is extremelyhigh, and a bright image display becomes possible.

In addition, a second passivation film 48 is then formed on the anode 47in this embodiment. It is preferable to use a silicon nitride film or anoxidized silicon nitride film as the second passivation film 48. Thepurpose of this is the isolation of the EL element from the outside, andthis is meaningful in preventing degradation due to oxidation of theorganic EL material, and in controlling gaseous emitted from the organicEL material. The reliability of the EL display can thus be raised.

The EL display device of the present invention has a pixel portion madefrom pixels structured as in FIG. 8, and has a switching TFT with asufficiently low off current value, and a current control TFT which isstrong with respect to hot carrier injection. An EL device having highreliability, and in which good image display is possible, can thereforebe obtained.

Note that it is possible to implement the constitution of thisembodiment by freely combining it with the constitutions of any ofEmbodiments 1 to 6.

Embodiment 8

In this embodiment, there will be described a structure in which thestructure of the EL element 3505 is reversed in the pixel portionillustrated in Embodiment 7. Explanation will be given with reference toFIG. 9. Note that since the points of difference from the structureshown in FIG. 8 lie only in parts of the EL element 3701 and the driverTFT 3553, the others shall be omitted from description.

Referring to FIG. 9, a driver TFT 3553 is formed using the p-channel TFTmanufactured by known method. Note that the driver TFT is not limited toa p-channel TFT and n-channel l ET may be used.

In this embodiment, a transparent conductive film is employed as a pixelelectrode (anode) 50. Concretely, the conductive film is made of acompound of indium oxide and zinc oxide. Of course, a conductive filmmade of a compound of indium oxide and tin oxide may well be employed.

Besides, after banks 51 a and 51 b made of an insulating film have beenformed, a light emitting layer 52 made of polyvinylcarbazole is formedon the basis of the application of a solution. The light emitting layer52 is overlaid with an electron injection layer 53 made of potassiumacetylacetonate (expressed as acacK), and a cathode 54 made of analuminum alloy. In this case, the cathode 54 functions also as apassivation film. Thus, an EL element 3701 is formed.

In the case of this embodiment, light generated by the light emittinglayer 52 is radiated toward a substrate 3501 formed with TFTs asindicated by an arrow.

The present embodiment can be freely combined with Embodiments 1 to 6 tobe implemented.

Embodiment 9

Although FIGS. 2, 3, 10 and 42 to 44 show the structure in which thestorage capacitor is provided to hold the voltage applied to the gateelectrode of the driver TFT, the storage capacitor can also be omitted.

In the case where the n-channel TFT used as a driver TFT has the LDDregion which is provided so as to overlap with the gate electrodethrough the gate insulating film. Although a parasitic capacitancegenerally called a gate capacitance is formed in this overlappingregion, this embodiment is characterized in that this parasiticcapacitance is positively used as a capacitor to hold a voltage appliedto a gate electrode of the driver TFT.

Since the capacity of this parasitic capacitance is changed by theoverlapping area of the gate electrode and the LDD region, it isdetermined by the length of the LDD region contained in the overlappingregion.

The present embodiment can be freely combined with Embodiments 1 to 8 tobe implemented.

Embodiment 10

In this embodiment, a method of manufacturing the pixel portion of an ELdisplay device in accordance with the present invention and a TFT of adriver circuit portion which is provided in the periphery of the pixelportion. Note that a CMOS circuit is shown in the figures as a basicunit for a driving circuit in order to simplify the explanation.

First, as shown in FIG. 11A, a substrate 501, on the surface of which abase film (not shown in the figures) is formed, is prepared. A 100 nmthick silicon nitride oxide film and a 200 nm thick silicon nitrideoxide film are laminated and used as the base film on crystallized glassin Embodiment 10. At this point it is appropriate to set the nitrogenconcentration of the film contacting the crystallized glass substrate tobetween 10 and 25 wt %. Elements may also, of course, be formed directlyon top of a quartz substrate without forming the base film.

Next, an amorphous silicon film 502 with a thickness of 45 nm is formedon the substrate 501 by a known film deposition method. Note that it isnot necessary to limit this to the amorphous silicon film, and any otherfilm, provided that it is a semiconductor film having an amorphousstructure (including a microcrystalline semiconductor film) may also beused. In addition, a compound semiconductor film containing an amorphousstructure, such as an amorphous silicon germanium film, may also beused.

The process from here to FIG. 11C may be completely cited from JapanesePatent Application Laid-open No. Hei 10-247735 of the present applicant.In this publication, a technique regarding a method of crystallizing asemiconductor film by using an element such as Ni or the like, as acatalyst is disclosed.

First, a protecting film 504 having opening portions 503 a and 503 b isformed. A 150 nm thick silicon oxide film is used in Embodiment 10. Alayer containing nickel (Ni) 505 (Ni containing layer) is then formed onthe protecting film 504 by spin coating. The above publication may bereferred to regarding the formation of the Ni containing layer.

Next, as shown in FIG. 11B, the amorphous silicon film 502 iscrystallized by heat treatment for 14 hours at 570° C. in an inertatmosphere. Crystallization proceeds roughly parallel to the substratewith regions in contact with Ni (hereafter referred to as Ni addedregions) 506 a and 506 b as origins, forming a polysilicon film 507having a crystal structure in which bar-shaped crystals are lined uptogether.

An element residing in periodic table group 15 (preferably phosphorous)is then added to the Ni added regions 506 a and 506 b with theprotecting film 504 left in place as a mask, as shown in FIG. 11C.Regions in which a high concentration of phosphorous is added (hereafterreferred to as phosphorous added regions) 508 a and 508 b are thusformed.

Next, as shown in FIG. 11C, a heat treatment is added for 12 hours at600° C. in an inert atmosphere. The Ni which exists in the polysiliconfilm 507 migrates due to the heat treatment, and finally, is nearlycompletely captured in the phosphorous added regions 508 a and 508 b, asshown by the arrows. This can be considered to be a phenomenon of agettering effect of the metal element (Ni in embodiment 10) byphosphorous.

The concentration of Ni remaining in the polysilicon film 509 by thisprocess is reduced at least to 2×10¹⁷ atoms/cm³, as measured by SIMS(secondary ion mass spectroscopy). Ni is a lifetime killer for thesemiconductor, and if the concentration of Ni is reduced to this level,then there is no harmful influence imparted to the characteristics of aTFT. Further, this concentration is nearly at the limit of measurabilityby current SIMS, and therefore it is anticipated that there is an evenlower actual concentration (not more than 2×10¹⁷ atoms/cm³).

The polysilicon film 509, crystallized by using a catalyst, and in whichthe catalyst is then reduced to a level at which it does not causedamage to the function of the TFT, is thus obtained. Active layers 510to 513 using only the polysilicon film 509 are formed afterward bypatterning. Note that a marker for performing mask alignment duringlater patterning may be formed at this time using the above polysiliconfilm. (See FIG. 11D.)

A 50 nm thick silicon nitride oxide film is formed next by plasma CVD,as shown in FIG. 11E, and moreover, a thermal oxidation step isperformed by heat treatment for 1 hour at 950° C. in an oxidizingatmosphere. Note that the oxidizing environment may be an oxygenatmosphere, or an oxygen atmosphere in which a halogen element is added.

Oxidation proceeds in the interface of the active layers and the abovesilicon nitride oxide film by the above thermal oxidation step, and anapproximately 15 nm thickness of the polysilicon film is oxidized,forming an approximately 30 nm thick silicon oxide film. In other words,a gate insulating film 514 with a thickness of 80 nm is formed from alamination of the 30 nm thick silicon oxide film and the 50 nm thicksilicon nitride oxide film.

A resist masks 515 a and 515 b is formed next, as shown in FIG. 12A, andan impurity element which imparts p-type conductivity (hereafterreferred to as a p-type impurity element) is added through the gateinsulating film 514. An element residing in periodic table group 13,typically boron or gallium, can be used as the p-type impurity element.This process is (referred to as a channel doping process) is a processfor controlling the threshold voltage of the TFT.

Note that boron is added in Embodiment 10 by plasma excited ion doping,without separation of mass, of diborane (B₂H₆). Ion implantation, whichperforms separation of mass, may of course also be used. Impurityregions 516 and 517, containing boron at a concentration of 1×10¹⁵ to1×10¹⁸ atoms/cm³ (typically between 5×10¹⁶ and 5×10¹⁷ atoms/cm³), areformed by this process.

Resist masks 519 a and 519 b are formed next, as shown in FIG. 12B, andan impurity element which imparts n-type conductivity (hereafterreferred to as an n-type impurity element) is added, through the gateinsulating film 514. An element residing in periodic table group 15,typically phosphorous or arsenic, can be used as the n-type impurityelement. Note that phosphorous is added at a concentration of 1×10¹⁸atoms/cm³ in Embodiment 10 by plasma excited plasma doping, withoutseparation of mass, of phosphine (PH₃). Ion implantation, which performsseparation of mass, may also be used, of course.

The dosage is regulated so that the n-type impurity element is containedin an n-type impurity region 520 formed as above at a concentration of2×10¹⁶ to 5×10¹⁹ atoms/cm³ (typically between 5×10¹⁷ and 5×10¹⁸atoms/cm³).

A process of activating the added n-type impurity elements and p-typeimpurity elements is then performed, as shown in FIG. 12C. It is notnecessary to place any limitations on the means of activation, but afurnace annealing process using an electric furnace is preferablebecause the gate insulating film 514 has been formed. Further, there isa possibility of damage being imparted to the interface of the activelayers and the gate insulating film of the portion which becomes achannel forming region in the process of FIG. 12A, and therefore it ispreferable to perform heat treatment at as high a temperature aspossible.

Crystallized glass having a high resistance to heat is used inEmbodiment 10, and therefore the activation process is performed byfurnace annealing at 800° C. for 1 hour. Note that thermal oxidation maybe performed by making the process environment into an oxidizingatmosphere, and that heat treatment may be performed by using an inertatmosphere.

The edge portion of the n-type impurity region 520, namely, the boundary(junction portion) with a region in the periphery of the n-type impurityregion 520 in which the n-type impurity element is not added (the p-typeimpurity region formed by the process of FIG. 12A) are defined by theabove process. This means that an extremely good junction portionbetween an LDD region and the channel forming region can be formed atthe point when the TFT is later completed.

A 200 to 400 nm thick conductive film is formed next and patterned,forming gate electrodes 522 to 525. The line width of the gateelectrodes 522 to 525 determine the channel length of each TFT

Note that a single layer conductive film may be formed for the gateelectrode, but when necessary, it is preferable to use a two layer or athree layer lamination film. A known conductive film can be used as thegate electrode material. Specifically, a film of an element chosen fromamong the group consisting of tantalum (Ta), titanium (Ti), molybdenum(Mo), tungsten (W), chromium (Cr), and silicon (Si); or a film of anitrated compound of the above elements (typically a tantalum nitridefilm, a tungsten nitride film, or a titanium nitride film); or an alloyfilm of a combination of the above elements (typically a Mo—W alloy or aMo—Ta alloy); or a silicide film of the above elements (typically atungsten silicide film or a titanium silicide film) can be used. Asingle layer film or a lamination may be used, of course.

A lamination film made from a 50 nm thick tungsten nitride (WN) film anda 350 nm thick tungsten (W) film is used in Embodiment 10. This film maybe formed by sputtering. Furthermore, if an inert gas such as xenon (Xe)or neon (Ne) is added as a sputtering gas, then film peeling due tostress can be prevented.

The gate electrode 523 is formed at this time so as to overlap portionof the n-type impurity region 520, with the gate insulating film 514interposed therebetween. The overlapping portions later become LDDregions overlapping the gate electrode. Note that two gate electrodes524 a and 524 b can be seen in cross section, but they are actuallyconnected electrically.

Next, an n-type impurity element (phosphorous is used in Embodiment 10)is added in a self-aligning manner with the gate electrodes 522 to 525as masks, as shown in FIG. 13A. The addition is regulated so thatphosphorous is added to impurity regions 526 to 533 thus formed at aconcentration of 1/10 to ½ (typically between ¼ and ⅓) that of then-type impurity region 520. Specifically, a concentration of 1×10¹⁶ to5×10¹⁸ atoms/cm³ (typically between 3×10¹⁷ and 3×10¹⁸ atoms/cm³) ispreferable.

Resist masks 534 a to 534 d are formed next, in a shape so as to coverthe gate electrodes, as shown in FIG. 13B, and an n-type impurityelement (phosphorous is used in Embodiment 10) is added, formingimpurity regions 535 to 539 containing a high concentration ofphosphorous. Ion doping using phosphine (PH₃) is also performed here,and the phosphorous concentration of these regions is regulated to befrom 1×10²⁰ to 1×10²¹ atoms/cm³ (typically between 2×10²⁰ and 5×10²⁰atoms/cm³).

A source region or a drain region of the n-channel TFT is formed by thisprocess, and in the switching TFT, a portion of the n-type impurityregions 528 to 531 formed by the process of FIG. 13A remains. Theseremaining regions correspond to the LDD regions of the switching TFT.

Next, as shown in FIG. 13C, the resist masks 534 a to 534 d are removed,and a new resist mask 542 is formed. A p-type impurity element (boron isused in Embodiment 10) is then added, forming impurity regions 540, 541,543 and 544 containing a high concentration of boron. Boron is addedhere to a concentration of 3×10²⁰ to 3×10²¹ atoms/cm³ (typically between5×10²⁰ and 1×10²¹ atoms/cm³) by ion doping using diborane (B₂H₆).

Note that phosphorous has already been added to the impurity regions540, 541, 543 and 544 at a concentration of 1×10²⁰ to 1×10²¹ atoms/cm³,but boron is added here at a concentration of at least 3 times that ofthe phosphorous. Therefore, the n-type impurity regions already formedcompletely invert to p-type, and function as p-type impurity regions.

Next, after removing the resist mask 542, as shown in FIG. 13D, a firstinterlayer insulating film 546 is formed. A single layer insulating filmcontaining silicon is used as the first interlayer insulating film 546,but a lamination film of the same may also be used. Further, a filmthickness of between 400 nm and 1.5 μm is appropriate. A laminationstructure of an 800 nm thick silicon oxide film on a 200 nm thicksilicon nitride oxide film is used in Embodiment 10.

The n-type impurity elements and the p-type impurity elements, added attheir respective concentrations, are activated afterward. Furnaceannealing is preferable as a means of activation. Heat treatment isperformed using an electric furnace for 4 hours at 550° C. in an inertatmosphere in Embodiment 10.

In addition, a heat treatment is also performed for 1 to 12 hours at300° C. to 450° C. in an atmosphere containing between 3 and 100%hydrogen, performing hydrogenation. This process is one of hydrogentermination of dangling bonds in the semiconductor film by hydrogenwhich has been thermally excited. Plasma hydrogenation (using hydrogenexcited by a plasma) may also be performed as another means ofhydrogenation.

Note that the hydrogenation step may also be conducted during theformation of the first interlayer insulating film 546. Namely, hydrogenprocessing may be performed as above after forming the 200 nm thicksilicon nitride oxide film, and then the remaining 800 nm thick siliconoxide film may be formed.

As shown in FIG. 14A, contact holes are formed next in the firstinterlayer insulating film 546 and the gate insulating film 514, therebyforming source wirings 547 to 550 and drain wirings 551 to 553. InEmbodiment 10, a lamination film with a three layer structure of a 100nm titanium film, a 300 nm aluminum film containing titanium, and a 150nm titanium film, formed successively by sputtering, is used as theelectrodes. Other conductive films may also be used, of course.

A first passivation film 554 is formed next with a thickness of 50 to500 nm (typically between 200 and 300 nm). A 300 nm thick siliconnitride oxide film is used as the first passivation film 554 inEmbodiment 10. A silicon nitride film may also be substitute for thesilicon nitride oxide film.

It is effective to perform plasma processing at this point using a gascontaining hydrogen, such as H₂ or NH₃, before the formation of thesilicon nitride oxide film. Hydrogen excited by this preprocess issupplied to the first interlayer insulating film 546, and the filmquality of the first passivation film 554 is improved by performing heattreatment. At the same time, the hydrogen added to the first interlayerinsulating film 546 diffuses to the lower side, and the active layerscan be effectively hydrogenated.

A second interlayer insulating film 555 made of an organic resin isformed next, as shown in FIG. 14B. Materials such as polyimide, acrylic,and BCB (benzocyclobutane) can be used as the organic resin. Inparticular, it is necessary for the second interlayer insulating film555 to level the step formed by the TFTs, and therefore it is preferableto use an acrylic film having superior leveling characteristics. A 2.5μm thick acrylic film is formed in Embodiment 10.

A contact hole for reaching the drain wiring 553 is formed next in thesecond interlayer insulating film 555 and in the first passivation film554, and a pixel electrode (anode) 556 is formed. In Embodiment 10, a110 nm thick indium tin oxide (ITO) film is formed, and patterning isperformed, forming the pixel electrode. Furthermore, a transparentconductive film in which between 2 and 20% zinc oxide (ZnO) is mixedinto indium oxide, may also be used. The pixel electrode becomes ananode of the EL element 203.

A 500 nm thick insulating film containing silicon (a silicon oxide filmin Embodiment 10) is formed next, and an opening portion is formed atthe position corresponding to the pixel electrode 556, forming a thirdinterlayer insulating film 557. By using wet etching when forming theopening portion, a sidewall having a tapered shape can easily be made.If the sidewall of the opening portion is not sufficiently gentle, thendegradation of an EL layer due to the step becomes a conspicuousproblem.

An EL layer 558 and a cathode (MgAg electrode) 559 are formed next insuccession, without exposure to the atmosphere, using vacuumevaporation. The film thickness of the EL layer 558 may be set from 80to 200 nm (typically between 100 and 120 nm) and the thickness of thecathode 559 may be set from 180 to 300 nm (typically between 200 and 250nm).

In this step, the EL layer and the cathode are formed for the pixelcorresponding to the color red, the pixel corresponding to the colorgreen, and the pixel corresponding to the color blue, in order. Notethat the EL layer has little resistance with respect to a solution, andtherefore the EL layer for each color must be formed individuallywithout using a photolithography technique. A metal mask or the like isthen used to cover regions except for those of the desired pixels, andit is preferred that the EL layer and the cathode are selectively formedin necessary portions.

In other words, a mask is set to cover all of the regions except for thepixels corresponding to the color red, and the red color emitting ELlayers and the cathodes are formed selectively using the mask. Next, amask is set to cover all of the regions except for the pixelscorresponding to the color green, and the green color emitting EL layersand the cathodes are formed selectively using the mask. A mask is nextsimilarly set to cover all of the regions except for the pixelscorresponding to the color blue, and the blue color emitting EL layersand the cathodes are formed selectively using the mask. Note that theuse of all different masks is stated here, but the same mask may also bereused. Besides, it is preferable that the process is carried outwithout breaking a vacuum until the EL layers and the cathodes areformed for all the pixels.

Note that a known material can be used as the EL layer 558. Consideringthe driving voltage, it is preferable to use an organic material as theknown material. For example, a 4 layer structure made from a holeinjecting layer, a hole transporting layer, a light emitting layer, andan electron injecting layer may be used as the EL layer. Further, anexample is shown of an MgAg electrode being used as the cathode of theEL element 203 in Embodiment 10, but another known material may also beused.

Further, it is appropriate that a conductive film comprising aluminum asits main constituent is used as a protective electrode 560. Theprotective electrode 560 may be formed with a vacuum evaporation methodusing the mask different from that used in the formation of the EL layerand the cathode. In addition, the protective electrode 560 is preferablyformed in succession without exposure to the atmosphere after theformation of the EL layer and the cathode.

Finally, a second passivation film 561 made from a silicon nitride filmis formed with a thickness of 300 nm. The EL layer is protected fromthings such as moisture by the protective electrode 560. Further, thesecond passivation film 561 further improves the reliability of the ELelement 203.

An active matrix type EL display device having a structure as shown inFIG. 14C is thus completed. Reference numeral 201 is a switching TFT,202 is a driver TFT, 204 is an n-channel TFT for a driver circuit, and205 is a p-channel TFT for a driver circuit.

Note that, in practice, it is preferable to perform packaging (sealing),without exposure to the atmosphere, using a protecting film (such as alaminated film or an ultraviolet cured resin film) having good airtightproperties, or a housing material such as a sealing can made of ceramic,after completing through to the state of FIG. 14C.

Embodiment 11

In this embodiment, the structure of a source signal side driver circuitwhen driving is not an analog gray-scale method but a digital timegray-scale method is described.

FIG. 15 shows a circuit diagram of an example of a source signal sidedriver circuit used in this embodiment. In this invention the drivingmethod may be applied to such as any of an analog gray-scale method, adigital time gray-scale method, a digital area gray-scale method.Further, a method of combining the gray-scale methods may be used.

Shift registers 801, latches (A) 802, and latches (B) 803 are arrangedas shown in the figure. Note that in this embodiment, one group of thelatches (A) 802 and the latches (B) 803 correspond to four source signallines S_a to S_d. Further, a level shifter for changing the width of theamplitude of the signal voltage is not formed in this embodiment, but itmay also be suitably formed by a designer.

A clock signal CLK, a clock signal CLKB in which the polarity of CLK isinverted, a start pulse signal SP, and a driver direction changeoversignal SL/R are each input to the shift registers 801 by the wiringsshown in the figure. Further, a digital data signal VD input from theoutside is input to the latches (A) 802 by the wirings shown in thefigure. A latch signal S_LAT and a signal S_LATb, in which the polarityof S_LAT is inverted, are input to the latches (B) 803 by the wiringsshown in the figure.

Regarding a detailed structure of the latches (A) 802, an example of aportion 804 of the latches (A) 802 which corresponding to the sourcesignal line S_a is explained. The portion 804 of the latches (A) 802 hastwo clocked inverters and two inverters.

A top view of the portion 804 of the latches (A) 802 is shown in FIG.16. Reference numerals 831 a and 831 b each denote an active layer of aTFT forming one inverter of the portion 804 of the latches (A) 802, andreference numeral 836 denotes a common gate electrode of the TFT formingone inverter. Further, reference numerals 832 a and 832 b each denote anactive layer of another TFT forming another inverter of the portion 804of the latches (A) 802, and reference numerals 837 a and 837 b denotegate electrodes formed on the active layers 832 a and 832 b,respectively. Note that the gate electrodes 837 a and 837 b areelectrically connected.

Reference numerals 833 a and 833 b each denote an active layer of a TFTforming one clock inverter of the portion 804 of the latches (A). Gateelectrodes 838 a and 838 b are formed on the active layer 833 a,becoming a double gate structure. Further, gate electrodes 838 b and 839are formed on the active layer 833 b, becoming a double gate structure.

Reference numerals 834 a and 834 b each denote an active layer of a TFTforming another clocked inverter of the portion 804 of the latches (A)802. Gate electrodes 839 and 840 are formed on the active layer 834 a,becoming a double gate structure. Further, gate electrodes 840 and 841are formed on the active layer 834 b, becoming a double gate structure.A gray-scale characteristic when the above digital gray-scale isconducted is shown in FIG. 45.

By using the above digital time gray-scale method, as shown in FIG. 45,a 64 gray-scale may be expressed.

This embodiment may freely combine and implement any of Embodiments 1 to10.

Embodiment 12

In the EL display device of the present invention, the material used forthe EL layer of the EL element is not limited to organic EL material butmay implement an inorganic EL material. However, since the inorganic ELmaterial at present is high in driver voltage, a TFT having a resistancecharacteristic that may endure the driver voltage has to be used.

Further, if an inorganic EL material is developed in the future with alower driver voltage, it may be applied to the present invention.

This embodiment may freely combine and implement any of Embodiments 1 to11.

Embodiment 13

In the present invention, an organic substance used as an EL layer maybe a low polymer organic substance or a polymer (high polymer) organicsubstance.

As a low polymer organic substance, a material with mainly such as Alq₃(tris-8-quinolilyte-al minium) and TPD (triphenyl amine derivative) areknown. As a polymer organic substance, there is a substance of a πconjugate polymer. Typically, there are such as PPV (polyparaphenylenevinylene), PVK (polyvinyl carbazole), or polycarbonate.

A polymer (high polymer) organic substance is formed by an easy thinfilm forming method such as a spin coating method (also referred to assolution application method), a dipping method, a printing method or anink jet method, and has a higher heat resistance as compared to the lowpolymer organic substance.

Further, in the EL element of the EL display device of the presentinvention, if the EL layer of the EL element comprises an electrontransporting layer and a hole transporting layer, the electrontransporting layer and the hole transporting layer may be structured byan inorganic material, for example, an amorphous semiconductor of suchas an amorphous Si and an amorphous Si_(1-x)C_(x).

In the amorphous semiconductor there is a large amount of trap level,and there is also a large amount of surface level formed at the surfacewhere the amorphous semiconductor contacts the other layers. Therefore,the EL element can emit light at a low voltage with high precision.

Further, a dopant (impurity) may be added to the organic EL layer tochange the color of light emitted from the organic EL layer. As a dopantthere are such as DCM1, nile red, rubrene, coumarin 6, TPB, quinacridon.

This embodiment may be freely combined with Embodiments 1 to 12 andimplemented.

Embodiment 14

In this embodiment, the EL display device of the present invention isdescribed using FIGS. 21A and 21B. FIG. 21A is a top view showing a TFTsubstrate formed with an EL element in which the filling of EL elementshas been conducted. Reference numeral 6801 denotes source signal sidedriver circuits, reference numerals 6802 a and 6802 b denote gate signalside driver circuits, and reference numeral 6803 denotes a pixelportion. Further, reference numeral 6804 denotes a cover member, 6805 afirst sealing material, and 6806 a second sealing material. A fillermaterial 6807 is provided in between the inner cover member which issurrounded by the first sealing material 6805 and the TFT substrate(refer to FIG. 21B).

Note that, reference numeral 6808 is a connection wiring fortransmitting a signal inputted to the source signal side driver circuit6801, a gate signal side driver circuit 6802 a and a pixel portion 403,and receives a video signal or a clock signal from a FPC (flexible printcircuit) 409 to be a connecting terminal with an external equipment.

Here, FIG. 21B shows cross sectional diagram in which FIG. 21A is cutalong the line A-A′. Note that in FIGS. 21A and 21B, parts having thesame reference numerals indicate the same portions.

As shown in FIG. 21B, on the substrate 6800 is formed a pixel portion6803 and a source signal side driver circuit 6801, and the pixel portion6803 is formed by a plurality of pixels including the TFT (hereinbelowreferred to as driver TFTs) 6851 for controlling the current flowing inthe EL element and the pixel electrode 6852 electrically connected tothe drain. In this embodiment, the driver TFT 6851 may be a p-channelTFT. Further, the source side driver circuit 6801 is formed using a CMOScircuit in which an n-channel TFT 6853 and a p-channel TFT 6854 arecomplementarily combined.

Each pixel comprises below the pixel electrode a color filter (R) 6855,a color filter (G) 6856 and a color filter (B) (not shown). Here a colorfilter (R) is a color filter for extracting a red light, color filter(G) is a color filter for extracting green light, and a color filter (B)is a color filter for extracting blue light. Note that, the color filter(R) 6855 is provided for a red color light emitting pixel, color filter(G) 6856 is provided for a green color light emitting pixel, and thecolor filter (B) is provided for a blue color light emitting pixel.

As an effect when providing the color filters, there is first an aspectthat the color purity of the light emitting color improves. For example,from a pixel with a red color light emission, a red light irradiated (inthis embodiment light is irradiated toward the pixel electrode side),however when this red light is passed through the color filterextracting the red light, the purity of the red color is improved. Thisis the same in the case of the other green and blue lights.

Further, in a conventional structure in which the color filter is notused, the visible light penetrating from the outside of the EL displaydevice excites the light emitting layer of the EL element resulting in aproblem that a desired color is not obtained. However, by providing acolor filter, only particular wavelength of light can enter the ELelement. That is, a problem that the EL element is excited by a lightfrom the outside may be prevented.

Note that, a structure of providing the color filter has been proposedbut the EL element which emits white light was used. In this case, sincelight of other wavelength was cut to extract the red light, a decreasein brightness occurred. However, in this embodiment, for example, sincea red light emitted from the EL element is passed through a color filterwhich extracts red light, the brightness is not decreased.

Next, a pixel electrode 6852 is formed of a transparent conductive filmand functions as an anode of an EL element. Further, on both ends of thepixel electrode 6852 is formed an insulating film 6857, and further alight emitting layer 6858 which emits red light and a light emittinglayer 6859 which emits green light are also formed. Further, althoughnot shown, a light emitting layer which emits a blue color is providedin the adjacent pixel, and a color display is performed by pixelscorresponding to red, green and blue. Of course, the pixel provided withthe light emitting layer which emits the blue color is provided with acolor filter which extracts the blue color.

Note that, as the material for the light emitting layers 6858 and 6859,not only an organic material but also an inorganic material may be used.Further, the structure may be a laminated structure of not only thelight emitting layer but also a combination of an electron injectinglayer, an electron transporting layer, a hole transporting layer and ahole injecting layer.

Further, above each light emitting layer, a cathode 6860 of the ELelement is formed of a conductive film with a light shielding property.The cathode 6860 is common to all the pixels and is electricallyconnected to the FPC 6809 through a connection wiring 6808.

Next, the first sealing material 6805 is formed by a dispenser or thelike, and sprinkled with a spacer (not shown) to adhere the cover member6804. Then, a region surrounded by the TFT substrate, the cover member6804 and the first sealing material 6805 is filled with a filler 6807 byvacuum injection.

Further, barium oxide is added as a hygroscopic substance 6861 to thefiller 6807 in advance. Note that, in this embodiment, the hygroscopicsubstance is added to the filler and used, but it may be filled in thefiller by dispersing it as clusters. Further, although not shown, ahygroscopic substance may be used as a material for a spacer.

Next, after hardening the filler 6807 by irradiating ultraviolet lightand heating, the opening (not shown) need in the first sealing material6805 is closed. When the opening of the first sealing material 6805 isclosed, the connection wiring 6808 and the FPC 6809 are electricallyconnected using the conductive material 6862. Further, a second sealingmaterial 6806 is provided so as to cover the exposed portion of thefirst sealing material 6805 and a portion of the FPC 6809. The secondsealing material 6806 may use the same material as the first sealingmaterial 6805.

Using the above method to fill the EL element into the filler 6807, theEL element may be completely shielded from the outside, to preventpenetration of substances that cause oxidation of organic material suchas moisture or oxygen from the outside. Therefore, an EL display devicewith high reliability may be manufactured.

Further, with the use of the present invention, the manufacturing lineof the existing liquid crystal display device may be converted tolargely reduce the cost for maintenance investment, and a plurality oflight emitting devices may be produced from one substrate with a processof high yield so that the manufacturing cost may be largely reduced.

Embodiment 15

The EL display device shown in Embodiment 14 of this embodiment in anexample where the irradiation direction of light emitted from the ELelement is different to the arrangement of the color filter isdescribed. FIG. 22 is used for the explanation but the basic structureis the same as that of FIG. 21B, therefore changed portions will bedescribed with new characters.

In this embodiment, an n-channel TFT is used as a driver TFT 6902 in thepixel portion 6901. Further, the drain of the driver TFT 6902 iselectrically connected to the pixel electrode 6903 and the pixelelectrode 6903 is formed by a conductive film having a light shieldingproperty. In this embodiment, the pixel electrode 6903 is a cathode ofan EL element.

Further, a transparent conductive film 6904, common to all pixels, isformed on the light emitting layer 6858 emitting red light and the lightemitting layer 6859 emitting green light are formed using the presentinvention.

Further, this embodiment is featured in that the color filter (R) 6905,the color filter (G) 6906 and the color filter (B) (not shown) areformed into the cover member 6804. In the case that the structure isthat of the EL element of this embodiment, the direction of the lightemitted from the light emitting layer is irradiated towards the covermember side, therefore a color filter may be provided in the light pathif the structure of FIG. 22 is used.

If color filter (R) 6905, color filter (G) 6906 and color filter (B)(not shown) are provided on the cover member 6804, the processes for theTFT substrate may be lessened, so that there is an advantage that yieldand throughput may be improved.

Embodiment 16

FIGS. 36 and 38 are Embodiment 2 of the pixel structure of the presentinvention. This embodiment is an example where a wiring layer differentto that of the source signal line and the gate signal line are added toform the power supply line.

Note that, in FIG. 36, the same portions as that shown in FIG. 7 inEmbodiment 7 are shown with the same reference numerals and thedescription thereof is omitted.

Note that, in FIG. 38, the same portions as that shown in FIG. 9 inEmbodiment 8 are shown with the same reference numerals and thedescription thereof is omitted.

A wiring layer 4502 a is provided at the lower side of the semiconductorlayer, thereby to form a power supply line 49 a. In this way, byproviding a different layer, the prevention of lowering of the openingratio by adding wiring is possible.

FIGS. 37 and 39 show Embodiment 3 of the present invention. In thisEmbodiment, the power supply line 49 b is brought to a different layerto that of Embodiment 2, a layer 4502 b.

Note that, in FIG. 37, the same portions as that shown in FIG. 8 inEmbodiment 7 are shown by the same reference numerals and thedescription thereof is omitted.

Note that, in FIG. 39, the same portions as that shown in FIG. 9 inEmbodiment 8 are shown by the same reference numerals and thedescription thereof is omitted.

In FIGS. 37 and 39, the power source supply lines 49 b are formed abovethe signal line 34, but it may be formed not in this position but on alayer between the gate signal line and the source signal line, or on thelayer below the gate signal.

Embodiment 17

In this embodiment, a case is described where the irradiation directionof light of the EL display device is to the lower surface direction (thesubstrate side) in Embodiment 10, and the power source supply line isprovided at the lower side of the semiconductor layer. However, forsimplification of explanation, the CMOS circuit which is a basic unitregarding the driver circuit is shown. Here, the driver circuit TFT maybe manufactured using the manufacturing method described in Embodiment10, therefore the description is omitted here.

First, as shown in FIG. 25A, the substrate 600 is prepared. In thisEmbodiment, a crystalline glass is used. A 200 to 400 nm thickconductive film is formed on the substrate 600, patterned by a resistmask 601, and etching is performed to form a power source supply line602. The etching performed may be dry etching or wet etching.

Next, as shown in FIGS. 25B and 25C, an oxide film is formed. In thisembodiment, a silicon nitride oxide film 603 with a thickness of 100 nmand a silicon nitride oxide film 604 with a thickness of 200 nm arelaminated. At this time, it is preferable that the nitrogenconcentration of the silicon nitride oxide film 603 that contacts thecrystalline glass substrate is 10 to 25 wt %. After forming the siliconnitride oxide film 604, the leveling of the surface is performed.Specifically a CMP or a surface polishing is performed.

Next, as shown in FIG. 25D, an amorphous silicon film 605 with athickness of 45 nm is formed by a known film formation method. Notethat, it is not necessary to limit the film to an amorphous siliconfilm, and may be a semiconductor film including a non-crystallinestructure (including a microcrystalline semiconductor film). Further, itmay be a compound semiconductor film including an amorphous structuresuch as an amorphous silicon germanium film.

The process from here to FIG. 26C may be completely cited from JapanesePatent Application Laid-open No. Hei 10-247735 of the present applicant.In this publication, a technique regarding a cystallization method of asemiconductor film using an element Ni or the like as a catalyst isdisclosed.

As shown in FIG. 25E, a protecting film 607 having opening portions 606a and 606 b is formed. In this embodiment, a silicon oxide film with athickness of 150 nm is used. Then, as shown in FIG. 26A, a layer 608 (aNi containing layer) including nickel (Ni) is formed on the protectingfilm 607 by a spin coating method. Regarding the formation of this Nicontaining layer, the above publication may be referred.

Next, as shown in FIG. 26B, a heating process is performed in an inertatmosphere at 570° C. for 14 hours to crystallize the amorphous siliconfilm 605. At this time, the regions 609 a and 609 b where Ni contacts(hereinafter referred to as Ni added region) are the starting points toprogress the crystallization substantially in parallel to the substrate,in order to form a polysilicon film 610 having a crystal structure inwhich bar-shaped crystals are gathered and lined.

Next, as shown in FIG. 26C, an element of group 15 of the periodic table(preferably phosphorous) is added to Ni added regions 609 a and 609 bwith the protecting film 607 as a mask. In this way, the regions 611 aand 611 b added with a high concentration of phosphorous is formed(hereinbelow referred to as phosphorous added region).

Next, as shown in FIG. 26C, a heating process is performed in an inertatmosphere at 600° C. for 12 hours. With this heating process the Ni inthe polysilicon film 610 moves so that in the end almost all of the Niis captured in the phosphorous added regions 611 a and 611 b as shown bythe arrows. This is considered as a phenomenon due to a gettering effectof the metal element (Ni in this embodiment) by the phosphorous.

With this process the concentration of Ni remaining in the polysiliconfilm 612 is lowered to a measurement value measured by the SIMS(secondary ion mass spectroscopy) of at least 2×10¹⁷ atoms/cm³. The Niis a life time killer to the semiconductor, but if it is lowered to thisdegree, there is no adverse influence to the TFT characteristic.Further, this concentration is the limit of measurement of the currentSIMS analysis, so that in actuality it is considered to be a lowerdensity (2×10¹⁷ atoms/cm³).

Thus, the polysilicon film 612 which is crystallized by using thecatalyst and in which the level of the catalyst is lowered so that itdoes not inhibit the function of the TFT is obtained. Thereafter, theactive layers 613 a and 613 b with only the polysilicon film 612 ispatterned and formed. Further, at this time, a marker for performingmask alignment in the patterning thereafter may be formed using thepolysilicon film (FIG. 26D).

Next, as shown in FIG. 26E, a silicon nitride oxide film with athickness of 50 nm is formed by a plasma CVD method, and above that isperformed a heating process in an oxide atmosphere at 950° C. for onehour, to perform a thermal oxidization process. Note that, the oxidizingatmosphere may be an oxygen atmosphere or an oxygen atmosphere addedwith a halogen element.

In this thermal oxidation process, oxidation progresses at the interfaceof the active layer and the nitride oxide silicon film, therebyoxidizing the polysilicon film with a thickness of approximately 15 nmto form the silicon oxide film with a thickness of approximately 30 nm.That is, a gate insulating film 614 with a thickness of approximately 80nm is formed laminated with a silicon oxide film with a thickness ofapproximately 50 nm and a silicon nitride oxide film with a thickness ofapproximately 30 nm. Note that, the thickness of the active layers 613 aand 613 b become 30 nm with this thermal oxidation process.

Next, as shown in FIG. 27A, the resist mask 615 is formed and animpurity element imparting the p-type conductivity (hereinafter referredto as p-type impurity element) is added through the gate insulating film614. As the p-type impurity element, typically an element belonging togroup 13 of the periodic table, typically boron or gallium may be used.This process (referred to as a channel doping process) is a process forcontrolling the threshold voltage of the TFT.

Note that, in this embodiment boron is added by an ion doping method byplasma excitation without mass separation of diborane (B₂H₆). Of course,an ion implantation method performing mass separation may be conducted.With this process an impurity region 616 including boron at aconcentration of 1×10¹⁵ to 1×10¹⁸ atoms/cm³ (typically 5×10¹⁶ to 5×10¹⁷atoms/cm³) is formed.

Next, as shown in FIG. 27B, the resist mask 619 is formed and animpurity element imparting the n-type conductivity (hereinafter referredto as n-type impurity element) is added through the gate insulating film614. As the n-type impurity element, typically an element belonging togroup 15 of the periodic table, typically phosphorus or arsenic may beused. Note that, in this embodiment phosphorus is added at aconcentration of 1×10¹⁸ atoms/cm³ by an plasma doping method by plasmaexcitation without mass separation of phosphine (PH₃). Of course, an ionimplantation method performing mass separation may be conducted.

In the n-type impurity region 620 formed with this process, the dosageof n-type impurity elements is controlled so as to be contained at aconcentration of 2×10¹⁶ to 5×10¹⁹ atoms/cm³ (typically 5×10¹⁷ to 5×10¹⁸atoms/cm³).

Next as shown in FIG. 27B, the activation processes of the added n-typeimpurity element and the p-type impurity element are conducted. Theactivation means is not limited, but a furnace annealing process usingan electric furnace is preferable since a gate insulating film 614 isprovided therewith. Note that, in the process of FIG. 27A, the interfaceof the active layer and the gate insulating film of the portion to bethe channel forming region may be damaged, so that it is preferable toperform heat processing at as high a temperature as possible.

In this embodiment, since a high heat resistant crystallized glass isused, the activation process may be performed by a furnace annealingprocess at 800° C. for one hour. Note that, thermal oxidation may beperformed with a process atmosphere of an oxidized atmosphere, or aheating process may be performed in an inert atmosphere.

Next, a conductive film with a thickness of 200 to 400 nm is formed andpatterned to form the gate electrodes 622, 623 and 625 and the sourcesignal electrode 624 and the power source electrode 626. The line widthof the gate electrodes 622, 623 and 625 determine the channel length ofeach TFT (FIG. 27D).

Note that, the gate electrode may be formed of a single layer conductivefilm, but accordingly may preferably be made as a laminate film of twoor three layers. As a material for the gate electrode, a knownconductive film may be used. Specifically, a film made of an elementchosen from tantalum (Ta), titanium (Ti), molybdebum (Mo), tungsten (W),chromium (Cr) or silicon (Si), a film made from a nitride of the aboveelements (typically a tantalum nitride film, a tungsten nitride film ora titanium nitride film), an alloy film combining the above elements(typically Mo—W alloy, Mo—Ta alloy), or a silicide film of the aboveelements (typically a tungsten silicide film, a titanium silicide film)may be used. Of course, a single layer or a laminate layer may be used.

In this embodiment, a laminate film made of a tungsten nitride (WN) film622 b, 623 b and 625 b with a thickness of 50 nm, and a tungsten (W)film 622 a, 623 a, 625 a with a thickness of 350 nm is used. This may beformed by a sputtering method. Further, if inert gas such as xenon (Xe)and neon (Ne) is added as a sputtering gas, the peeling of the film dueto stress may be prevented.

Note that, the gate electrodes 622 a (622 b) and 623 a (623 b) are shownto be separated in two at the cross section but are in actualityelectrically connected.

Next, as shown in FIG. 28A, n-type impurity element (in this embodimentphosphorus) is added in a self aligning manner with the gate electrodes622, 623 and 625, the source signal electrode 624 and the power sourceelectrode 626 as masks. The impurity regions 627 to 631 formed in thisway are added with phosphorus to be adjusted to a concentration of ½ to1/10 (typically ⅓ to ¼) as that in the n-type impurity region 620.Specifically, the concentration is preferably 1×10¹⁶ to 5×10¹⁸ atoms/cm³(typically 3×10¹⁷ to 3×10¹⁸ atoms/cm³).

Next, as shown in FIG. 28B, resist masks 634 a to 634 c are formed as tocover the gate electrodes and the like, and the n-type impurity element(in this embodiment, phosphorus) is added to thereby form impurityregions 635 to 637 containing phosphorus at a high concentration. Here,an ion doping method using phosphine (PH₃) is performed so that thedensity of phosphorus in this region is adjusted to be 1×10²⁰ to 1×10²¹atoms/cm³ (typically 2×10²⁰ to 5×10²¹ atoms/cm³).

In this process the source region and the drain region of the n-channelTFT are formed, but a portion of the n-type impurity regions 627 to 631formed in the process of FIG. 28A remains in the switching TFT. Theremaining region becomes the LDD region of the switching TFT.

Next, as shown in FIG. 28C, resist masks 634 a to 634 c are removed toform a new resist mask 642. Then, a p-type impurity element (in thisembodiment boron) is added to form impurity regions 643 and 644including boron at a high concentration. Here boron is added by an iondoping method using diborane (B₂H₆) at a concentration of 3×10²⁰ to3×10²¹ atoms/cm³ (typically 5×10²⁰ to 1×10²¹ atoms/cm³).

Note that, the impurity regions 643 and 644 are already added withphosphorus at a concentration of 1×10²⁰ to 1×10²¹ atoms/cm³, but boronto be added here is added at a concentration of at least 3 times ormore. Therefore, the n-type impurity region formed in advance completelyreverses to a p-type to thereby function as a p-type impurity region.

Next, as shown in FIG. 28D, after the resist mask 642 is removed, afirst interlayer insulating film 646 is formed. As the first interlayerinsulating film 646, an insulating film including silicon is used as asingle layer or a laminate film with a combination thereof may be used.Note that, the film thickness may be 400 nm to 1.5 μm. This embodimenthas a structure where the silicon oxide film with a thickness of 800 nmis laminated on the silicon nitride oxide film with a thickness of 200nm.

Thereafter, the n-type or p-type impurity element added at eachconcentration is activated. As an activation means, a furnace annealingmethod is preferable. In this embodiment, a heating process is performedin an electric furnace in a nitrogen atmosphere at 550° C. for 4 hours.

Further, in an atmosphere including 3 to 100% of hydrogen, a heatingprocess at 300 to 450° C. for 1 to 12 hours and hydrogenation process isperformed. This process is a step for terminating dangling bonds of thesemiconductor film with thermally excited hydrogen. As other means forhydrogenation, plasma hydrogenation (using hydrogen excited by plasma)may be performed.

Note that, the hydrogenation process may be conducted while forming thefirst interlayer insulating film 646. That is, the hydrogenation processmay be performed as above after forming the silicon nitride oxide filmwith a thickness of 200 nm, and then forming the rest of the siliconoxide film with a thickness of 800 nm.

Next, as shown in FIG. 29A, a contact hole is formed with respect to thefirst interlayer insulating film 646 and the gate insulating film 614,and the source wirings 647, 650 and the drain wirings 652, 653 areformed. Note that, in this embodiment, the electrode is a laminate filmof a three-layered structure forming a Ti film with a thickness of 100nm, an aluminum film containing Ti with a thickness of 300 nm, and a Tifilm with a thickness of 150 nm consecutively by a sputtering method. Ofcourse, other conductive films may be used.

Next, a first passivation film 654 is formed with a thickness of 50 to500 nm (typically 200 to 300 nm). In this embodiment, a silicon oxidenitride film with a thickness of 300 nm is used as a first passivationfilm 654. This may be substituted by a silicon nitride film.

At this time, before the formation of the silicon nitride oxide film, itis effective to perform plasma processing using gas including hydrogensuch as H₂ or NH₃. Hydrogen excited by this pre-process is supplied tothe first interlayer insulating film 646, and by performing heatprocessing, the quality of the first passivation film 654 is improved.At the same time, hydrogen added to the first interlayer insulating film646 is dispersed at the lower layer side so that hydrogenation of theactive layer can be conducted effectively.

Next, as shown in FIG. 29B, a second interlayer insulating film 655 ofan organic resin is formed. As an organic resin, polyimide, acryl, BCB(benzocyclobutylene) or the like may be used. Particularly, in thesecond interlayer insulating film 655, the leveling of the step formedby the TFT has to be conducted, so that an acrylic film excellent forleveling is preferred. In this embodiment, an acrylic film with athickness of 2.5 μm is formed.

Next, a contact hole which reaches the drain wiring 653 is formed in thesecond interlayer insulating film 655 and the first passivation film654, and then a pixel electrode (anode) 656 is formed. In thisembodiment, an indium tin oxide (ITO) film is formed to a thickness of110 nm, and patterning is performed to make a pixel electrode. Further,a transparent conductive film with 2 to 20% of zinc oxide (ZnO) mixed inthe indium oxide may be used. This pixel electrode becomes the anode ofthe EL element.

Next, resins 661 a and 661 b are formed with a thickness of 500 nm andan opening portion is formed at the positions corresponding to the pixelelectrode 656.

Next, an EL layer 658 and a cathode (MgAg electrode) 659 are formed insuccession without exposure to the atmosphere using a vacuum evaporationmethod. Note that the thickness of the EL layer 658 may be set tobetween 80 to 200 nm (typically between 100 and 120 nm) and thethickness of the cathode 659 may be set to between 180 and 300 nm(typically between 200 and 250 nm).

In this process, the EL layer and the cathode are formed one afteranother with respect to pixels corresponding to the color red, pixelscorresponding to the color green, and pixels corresponding to the colorblue. However, the EL layer is weak with respect to a solution, andtherefore the EL layer and the cathode must be formed with respect toeach of the colors without using a photolithography technique. It ispreferable to cover areas outside of the desired pixels using a metalmask, and selectively form the EL layer and the cathode only in thenecessary locations.

In other words, a mask is first set so as to cover all pixels except forthose corresponding to the color red, and the EL layer for emitting redcolor light and the cathode are selectively formed using the mask. Next,a mask is set so as to cover all pixels except for those correspondingto the color green, and the EL layer for emitting green color light andthe cathode are selectively formed using the mask. Similarly, a mask isset so as to cover all pixels except for those corresponding to thecolor blue, and the EL layer for emitting blue color light and thecathode are selectively formed using the mask. Note that the use of alldifferent masks is stated here, but the same mask may also be reused.Besides, it is preferable that the process is carried out withoutbreaking a vacuum until the EL layers and the cathodes are formed forall the pixels.

A known material can be used as the EL layer 658. Considering the drivervoltage, it is preferable to use an organic material as the knownmaterial. For example, a four layer structure constituted of a holeinjecting layer, a hole transporting layer, a light emitting layer andan electron injecting layer may be adopted as the EL layer. Further, inEmbodiment 17, although the MgAg electrode is used as the cathode of theEL element, the present invention is not limited to this. Other knownmaterials may be used for the cathode.

Further, it is appropriate that a conductive film comprising aluminum asits main constituent is used as a protective electrode 660. Theprotective electrode 660 may be formed with a vacuum evaporation methodusing the mask different from that used in the formation of the EL layerand the cathode. In addition, the protective electrode 660 is preferablyformed in succession without exposure to the atmosphere after theformation of the EL layer and the cathode.

In this way, the active matrix EL display device with the structure asshown in FIG. 29C is completed.

Note that, in practice, it is preferable to perform packaging (sealing),without exposure to the atmosphere, using a protecting film (such as alaminated film or an ultraviolet cured resin film) having good airtightproperties, or a housing material such as a sealing can made of ceramic,after completing through to the state of FIG. 29C.

Embodiment 18

In Embodiment 18, a method, in which the light radiation direction of anEL display device is set to the direction toward the lower surface(substrate side) and a current supply line is manufactured at the upperportion of a signal line in Embodiment 10, is explained. However, inorder to simplify the explanation, a CMOS circuit, which is the basiccircuit for the driver circuit, is shown in the figures. Here, a drivercircuit TFT can be manufactured by using the manufacturing methoddescribed in Embodiment 10, and the explanation thereof is omitted.

First, as shown in FIG. 30A, a substrate 701 provided with a base film702 on the surface is prepared. In Embodiment 18, a lamination film of asilicon nitride oxide film with a thickness of 100 nm and a siliconnitride oxide film with a thickness of 200 nm is used as the base filmon a crystallized glass. At this time, the nitrogen concentration at theside in contact with the crystallized glass may be set to between 10 to25 wt %. Of course, an element may be directly formed on a quartzsubstrate without the provision of the base film.

Next, an amorphous silicon film 703 with a thickness of 45 nm is formedon a base film 702 by a known film formation method. Note that, it isnot necessary to limit the film to an amorphous silicon film, and it maybe a semiconductor film including a non-crystalline structure (includinga microcrystalline semiconductor film). Further, it may be a compoundsemiconductor film including a non-crystalline structure such as anon-crystalline silicon geranium film.

The process from here to FIG. 30C may be completely cited from JapanesePatent Application Laid-open No. Hei 10-247735 of the present applicant.In this publication, a technique regarding a cystallization method of asemiconductor film using an element Ni or the like as a catalyst isdisclosed.

A protecting film 705 having opening portions 704 a, 704 b and 704 c isformed first. In this embodiment, a silicon oxide film with a thicknessof 150 nm is used. Then, a layer 706 (a Ni containing layer) includingnickel (Ni) is formed on the protecting film 705 by a spin coatingmethod. Regarding the formation of this Ni containing layer, the abovepublication may be referred.

Next, as shown in FIG. 30B, a heating process is performed in an inertatmosphere at 570° C. for 14 hours to crystallize the amorphous siliconfilm 703. At this time, the regions 707 a, 707 b and 707 c where Nicontacts (hereinafter referred to as Ni added regions) are the startingpoints to progress the crystallization substantially in parallel to thesubstrate, in order to form a polysilicon film 708 of a crystalstructure where bar-like crystals are gathered and lined.

Next, as shown in FIG. 30C, an element of group 15 of the periodic table(preferably phosphorous) is added to Ni added regions 707 a, 707 b and707 c with the protecting film 705 as a mask. In this way, the regions709 a, 709 b, and 709 c added with a high concentration of phosphorousis formed (hereinbelow referred to as phosphorous added regions).

Next, as shown in FIG. 30C, a heating process is performed in an inertatmosphere at 600° C. for 12 hours. With this heating process the Ni inthe polysilicon film 708 moves so that in the end almost all of the Niis captured in the phosphorous added regions 709 a, 709 b and 709 c asshown by the arrows. This is considered as a phenomenon due to agettering effect of the metal element (Ni in this embodiment) by thephosphorous.

With this process the concentration of Ni remaining in the polysiliconfilm 710 is lowered to a measurement value measured by the SIMS(secondary ion mass spectrometer) of at least 2×10¹⁷ atoms/cm³. The Niis a life time killer to the semiconductor, but if it is lowered to thisdegree, there is no adverse influence to the TFT characteristic.Further, this concentration is almost the limit of measurement of thecurrent SIMS analysis, so that in actuality it is considered to be alower density (2×10¹⁷ atoms/cm³).

Thus, the polysilicon film 710 which is crystallized using the catalystand in which the level of the catalyst is lowered so that it does notinhibit the function of the TFT is obtained. Thereafter, the activelayers 711 a and 711 b with only the polysilicon film 710 are patternedand formed. Further, at this time, a marker for performing maskalignment in the patterning thereafter may be formed using thepolysilicon film (FIG. 30D).

Next, as shown in FIG. 30E, a silicon nitride oxide film with athickness of 50 nm is formed by a plasma CVD method, and above that isperformed a heating process in an oxide atmosphere at 950° C. for onehour, to perform a thermal oxidization process. Note that, the oxidizingatmosphere may be an oxygen atmosphere or an oxygen atmosphere addedwith a halogen element.

In this thermal oxidation process, oxidation progresses at the interfaceof the active layer and the silicon nitride oxide film, therebyoxidizing the polysilicon film with a thickness of approximately 15 nmto form the silicon oxide film with a thickness of approximately 30 nm.That is, a gate insulating film 712 with a thickness of approximately 80nm is formed laminated with a silicon oxide film with a thickness ofapproximately 50 nm and a silicon nitride oxide film with a thickness ofapproximately 30 nm. Note that, the thickness of the active layers 711 aand 711 b become 30 nm with this thermal oxidation process.

Next, as shown in FIG. 31A, the resist mask 713 is formed and animpurity element imparting the p-type conductivity (hereinafter referredto as p-type impurity element) is added through the gate insulating film712. As the p-type impurity element, typically an element belonging togroup 13 of the periodic table, typically boron or gallium may be used.This process (referred to as a channel doping process) is a step forcontrolling the threshold voltage of the TFT.

Note that, in this embodiment boron is added by an ion doping method byplasma excitation without mass separation of diborane (B₂H₆). Of course,an ion implantation method performing mass separation may be conducted.With this process an impurity region 714 including boron at aconcentration of 1×10¹⁵ to 1×10¹⁸ atoms/cm³ (typically 5×10¹⁶ to 5×10¹⁷atoms/cm³) is formed.

Next, as shown in FIG. 31B, the resist mask 716 is formed and animpurity element imparting the n-type conductivity (hereinafter referredto as n-type impurity element) is added through the gate insulating film712. As the n-type impurity element, typically an element belonging togroup 15 of the periodic table, typically phosphorus or arsenic may beused. Note that, in this embodiment phosphorus is added at aconcentration of 1×10¹⁸ atoms/cm³ by a plasma doping method by plasmaexcitation without mass separation of phosphine (PH₃). Of course, an ionimplantation method performing mass separation may be conducted.

In the n-type impurity region 715 formed with this process, the dosageof n-type impurity elements is controlled so as to be contained at aconcentration of 2×10¹⁶ to 5×10¹⁹ atoms/cm³ (typically 5×10¹⁷ to 5×10¹⁸atoms/cm³).

Next, as shown in FIG. 31C, the activation processes of the added n-typeimpurity element and the p-type impurity element are conducted. Theactivation means is not limited, but a furnace annealing process usingan electric furnace is preferable since a gate insulating film 712 isprovided. Note that, in the process of FIG. 31A, the interface of theactive layer and the gate insulating film of the portion to be thechannel forming region may be damaged, so that it is preferable toperform heat processing at as high a temperature as possible.

In this embodiment, since a high heat resistant crystallized glass isused, the activation process may be performed by a furnace annealingprocess at 800° C. for one hour. Note that, thermal oxidation may beperformed with a process atmosphere of an oxidized atmosphere, or aheating process may be performed in an inert atmosphere.

Next, a conductive film with a thickness of 200 to 400 nm is formed andpatterned to form the gate electrodes 622, 719 to 724 and the wirings717 and 718. The line width of the gate electrodes 719 to 724 determinethe channel lengths of each TFT (FIG. 31D).

Note that, the gate electrode may be formed of a single layer conductivefilm, but accordingly may preferably be made as a laminate film of twoor three layers. As a material for the gate electrode, a knownconductive film may be used. Specifically, a film made of an elementchosen from tantalum (Ta), titanium (Ti), molybdebum (Mo), tungsten (W),chromium (Cr) or silicon (Si), a film made from a nitride of the aboveelements (typically a tantalum nitride film, a tungsten nitride film ora titanium nitride film), an alloy film combining the above elements(typically Mo—W alloy, Mo—Ta alloy), or a silicide film of the aboveelements (typically a tungsten silicide film, a titanium silicide film)may be used. Of course a single layer or a laminate layer may be used.

In this embodiment, a laminate film made of a tungsten nitride (WN) film722 to 724 with a thickness of 50 nm, and a tungsten (W) film 719 to 721with a thickness of 350 nm is used. This may be formed by a sputteringmethod. Further, if inert gas such as xenon (Xe) and neon (Ne) is addedas a sputtering gas, the peeling of the film due to stress may beprevented.

The gate electrodes 719 (722), 720 (723) are shown to be separated intwo at the cross section but are in actuality electrically connected.

Next, as shown in FIG. 32A, n-type impurity element (in this embodimentphosphorus) is added in a self-aligning manner with the gate electrodes719 to 724 and the wirings 717 and 718 as masks. The impurity regions725 to 729 formed in this way are added with phosphorus to be adjustedto a concentration of ½ to 1/10 (typically ⅓ to ¼) as that in the n-typeimpurity region 715. Specifically, the concentration is preferably1×10¹⁶ to 5×10¹⁸ atoms/cm³ (typically 3×10¹⁷ to 3×10¹⁸ atoms/cm³).

Next, as shown in FIG. 32B, resist masks 730 a to 730 c are formed as tocover the gate electrodes and the like, and the n-type impurity element(in this embodiment, phosphorus) is added to thereby form impurityregions 731 to 733 containing phosphorus at a high concentration. Here,an ion doping method using phosphine (PH₃) is performed so that thedensity of phosphorus in the region is adjusted to be 1×10²⁰ to 1×10²¹atoms/cm³ (typically 2×10²⁰ to 5×10²¹ atoms/cm³).

In this process the source region and the drain region of the n-channelTFT are formed, but a portion of the n-type impurity regions 725 to 727formed in the process of FIG. 32A remains in the switching TFT. Theremaining region becomes the LDD region of the switching TFT.

Next, as shown in FIG. 32C, resist masks 730 a to 730 c are removed toform a new resist mask 34. Then, a p-type impurity element (in thisembodiment, boron) is added to form impurity regions 735 and 736including boron at a high concentration. Here boron is added by an iondoping method using diborane (B₂H₆) at a concentration of 3×10²⁰ to3×10²¹ atoms/cm³ (typically 5×10²⁰ to 1×10²¹ atoms/cm³).

Note that, the impurity regions 735 and 736 are already added withphosphorus at a concentration of 1×10²⁰ to 1×10²¹ atoms/cm³, but boronto be added here is added at a concentration of at least three times ormore. Therefore, the n-type impurity region formed in advance completelyreverses to a p-type to thereby function as a p-type impurity region.

Next, as shown in FIG. 32D, after the resist mask 734 is removed, thefirst interlayer insulating film 737 is formed. As the first interlayerinsulating film 737, an insulating film including silicon is used as asingle layer or a laminate film with a combination thereof is used. Notethat, the film thickness may be 400 nm to 1.5 μm. This embodiment has astructure where the silicon oxide film with a thickness of 800 nm islaminated on the silicon nitride oxide film with a thickness of 200 nm.

Thereafter, the n-type or p-type impurity element added at eachconcentration is activated. As an activation means, a furnace annealingmethod is preferable. In this embodiment, a heating process is performedin an electric furnace in a nitrogen atmosphere at 550° C. for 4 hours.

Further, in an atmosphere including 3 to 100% of hydrogen, a heatingprocess for 1 to 12 hours at 300 to 450° C. and hydrogenation process isperformed. This process is a step for terminating dangling bonds of thesemiconductor film with thermally excited hydrogen. As other means forhydrogenation, plasma hydrogenation (using hydrogen excited by plasma)may be performed.

Note that, the hydrogenation process may be conducted while forming thefirst interlayer insulating film 737. That is, the hydrogenation processmay be performed as above after forming the silicon nitride oxide filmwith a thickness of 200 nm, and then forming the rest of the siliconoxide film with a thickness of 800 nm.

Next, as shown in FIG. 33A, a contact hole is formed with respect to thefirst interlayer insulating film 737 and the gate insulating film 712,and the source wirings 738, 739 and the drain wirings 740, 741 areformed. Note that, in this embodiment, the electrode is a laminate filmof a three-layered structure made of a Ti film with a thickness of 100nm, an aluminum film containing Ti with a thickness of 300 nm and a Tifilm with a thickness of 150 nm formed in succession by a sputteringmethod. Of course, other conductive films may be used.

Next, a first passivation film 742 is formed with a thickness of 50 to500 nm (typically 200 to 300 nm). In this embodiment, a silicon oxidenitride film with a thickness of 300 nm is used as a first passivationfilm 742. This may be substituted by a silicon nitride film.

At this time, before the formation of the silicon nitride oxide film, itis effective to perform plasma processing using gas including hydrogensuch as H₂ or NH₃. Hydrogen excited by this pre-process is supplied tothe first interlayer insulating film 737, and by performing heatprocessing, the quality of the first passivation film 742 is improved.At the same time, hydrogen added to the first interlayer insulating film737 is dispersed at the lower layer side so that hydrogenation of theactive layer can be conducted effectively.

Next, as shown in FIG. 33B, an insulating film 743 is formed. In thisembodiment, a silicon nitride oxide film is used as the insulating film743. Thereafter a contact hole which reaches the wiring 739 is formed inthe insulating film 743, the first passivation film 742 and the firstinterlayer insulating film 737, to form a power source supply line 744.Note that, in this embodiment, the power source supply line 744 is alaminate film formed of a tungsten nitride film and a tungsten film. Ofcourse, other conductive films may be used.

Next, as shown in FIG. 33C, a second interlayer insulating film 745 ofan organic resin is formed. As an organic resin, polyimide, acryl, BCB(benzocyclobutylene) or the like may be used. Particularly, in thesecond interlayer insulating film 745, the leveling of the step formedby the TFT has to be conducted, so that an acrylic film excellent forleveling is preferred. In this embodiment, an acrylic film with athickness of 2.5 μm is formed.

Next, as shown in FIG. 33D, a contact hole which reaches the drainwiring 741 is formed in the second interlayer insulating film 745, theinsulating film 743 and the first passivation film 742, and then a pixelelectrode (anode) 746 is formed. In this embodiment, an indium tin oxide(ITO) film if formed to a thickness of 110 nm, and patterning isperformed to make a pixel electrode. Further, a transparent conductivefilm with 2 to 20% of zinc oxide (ZnO) mixed in the indium oxide may beused. This pixel electrode becomes the anode of the EL element.

Next, as shown in FIG. 34, resins 747 a and 747 b are formed with athickness of 500 nm and an opening portion is formed at the positionscorresponding to the pixel electrode 746.

Next, an EL layer 748 and a cathode (MgAg electrode) 749 are formed insuccession without exposure to the atmosphere by using a vacuumevaporation method. Note that the thickness of the EL layer 748 may beset to between 80 to 200 nm (typically between 100 and 120 nm) and thethickness of the cathode 749 may be set to between 180 and 300 nm(typically between 200 and 250 nm).

In this process, the EL layer and the cathode are formed one afteranother with respect to pixels corresponding to the color red, pixelscorresponding to the color green, and pixels corresponding to the colorblue. However, the EL layer is weak with respect to a solution, andtherefore the EL layer and the cathode must be formed with respect toeach of the colors without using a photolithography technique. It ispreferable to cover areas outside of the desired pixels using a metalmask, and selectively form the EL layer and the cathode only in thenecessary locations.

In other words, a mask is first set so as to cover all pixels except forthose corresponding to the color red, and the EL layer for emitting redcolor light and the cathode are selectively formed using the mask. Next,a mask is set so as to cover all pixels except for those correspondingto the color green, and the EL layer for emitting green color light andthe cathode are selectively formed using the mask. Similarly, a mask isset so as to cover all pixels except for those corresponding to thecolor blue, and the EL layer for emitting blue color light and thecathode are selectively formed using the mask. Note that the use of alldifferent masks is stated here, but the same mask may also be reused.Besides, it is preferable that the process is carried out withoutbreaking a vacuum until the EL layers and the cathodes are formed forall the pixels.

A known material can be used as the EL layer 748. Considering the drivervoltage, it is preferable to use an organic material as the knownmaterial. For example, a four layer structure constituted of a holeinjecting layer, a hole transporting layer, a light emitting layer andan electron injecting layer may be adopted as the EL layer. Further, inthis embodiment, although the MgAg electrode is used as the cathode ofthe EL element, the present invention is not limited to this. Otherknown materials may be used for the cathode.

Further, it is appropriate that a conductive film comprising aluminum asits main constituent is used as a protective electrode 750. Theprotective electrode 750 may be formed with a vacuum evaporation methodusing the mask different from that used in the formation of the EL layerand the cathode. In addition, the protective electrode 660 is preferablyformed in succession without exposure to the atmosphere after theformation of the EL layer and the cathode.

In this way, the active matrix EL display device with the structure asshown in FIG. 34 is completed.

Note that, in practice, it is preferable to perform packaging (sealing),without exposure to the atmosphere, using a protecting film (such as alaminated film or an ultraviolet cured resin film) having good airtightproperties, or a sealing can made of ceramic, after completing throughto the state of FIG. 34.

Embodiment 19

The EL display device manufactured by applying the present invention canbe used in various kinds of electronic equipment. The electronicequipment, which incorporates the EL display device manufactured byapplying the present invention as the display medium, are explainedbelow.

Such kind of electronic equipment include a TV receiver, a telephone, avideo camera, a digital camera, a head mounted display (goggle typedisplay), a game machine, a car navigation system, a personal computer,a portable information terminal (a mobile computer, a portabletelephone, an electronic book and the like) and the like. Examples ofthose are shown in FIGS. 17A to 17F.

FIG. 17A shows a personal computer, which contains a main body 2001, acasing 2002, a display portion 2003, a keyboard 2004 and the like. TheEL display device of the present invention can be used in the displayportion 2003 of the personal computer.

FIG. 17B shows a video camera, which contains a main body 2101, adisplay portion 2102, a sound input portion 2103, operation switches2104, a battery 2105, an image receiving portion 2106 and the like. TheEL display device of the present invention can be used in the displayportion 2102 of the video camera.

FIG. 17C shows a portion (right side) of a head mounted display, whichcontains a main body 2301, a signal cable 2302, a head fixing band 2303,a screen monitor 2304, an optical system 2305, a display portion 2306and the like. The EL display device of the present invention can be usedin the display portion 2306 of the head mounted display.

FIG. 17D shows an image playback device equipped with a recording medium(specifically, a DVD playback device), which contains a main body 2401,a recording medium (such as a CD, an LD or a DVD) 2402, operationswitches 2403, a display portion (a) 2404, a display portion (b) 2405and the like. The display portion (a) 2404 is mainly used for displayingimage information. The display portion (b) 2405 is mainly used fordisplaying character information. The EL display device of the presentinvention can be used in the display portion (a) 2404 and the displayportion (b) 2405 of the image playback device equipped with therecording medium. Note that the present invention can be applied todevices such as a CD playback device and a game machine as the imageplayback device equipped with the recording medium.

FIG. 17E shows a mobile computer, which contains a main body 2501, acamera portion 2502, an image receiving portion 2503, operation switches2504, a display portion 2505 and the like. The EL display device of thepresent invention can be used in the display portion 2505 of the mobilecomputer.

FIG. 17F shows a TV receiver, which contains a main body 2604 a, adisplay portion 2604 c, operation switches 2604 d and the like. The ELdisplay device of the present invention can be used in the displayportion 2604 c of the TV receiver.

Further, if the emission luminance of an EL material is improved infuture, the EL material may be used in a front type or rear typeprojector.

The applicable range of the present invention is extremely wide, asshown above, and it is possible to apply the present invention toelectronic equipment in all fields. Further, the electronic equipment ofthis embodiment can be realized using the constitution in whichEmbodiments 1 to 18 are freely combined.

In the conventional EL display device, when the screen size is enlarged,potential drop occurs in the current supply line due to the increase ofelectric current arisen from the large screen size, and this has been aproblem in that the quality of image display is impaired.

However, the present invention may decrease the effect of the wiringresistance by the above structure, and even if the current flowing inthe EL element increases, display may be performed without failing thequality of picture.

What is claimed is:
 1. (canceled)
 2. A display device comprising: apixel over a substrate, the pixel comprising an EL element and atransistor having a top gate structure and comprising a semiconductorfilm; a gate signal line over the substrate; a source signal line overthe substrate; a first power supply line extending in a directionparallel to the gate signal line over the substrate; a first insulatingfilm over the first power supply line, the first insulating filmcomprising a first contact hole and a second contact hole; a secondpower supply line over the first insulating film extending in adirection perpendicular to the first power supply line; a conductivefilm over the first insulating film, the conductive film being connectedthe semiconductor film through the first contact hole; a secondinsulating film over the second power supply line and the conductivefilm; a pixel electrode of the EL element over the second insulatingfilm; and a third insulating film over the second insulating film, thethird insulating film comprising an opening, wherein the first powersupply line is made from a same material as the gate signal line,wherein the second power supply line is made from a same material as thesource signal line, wherein the second power supply line is connectedthe first power supply line through the second contact hole, and whereinthe opening and the pixel electrode overlap each other.
 3. The displaydevice according to claim 2, wherein the pixel electrode comprisessilver.
 4. The display device according to claim 2, wherein the pixelelectrode comprises a compound of indium oxide and tin oxide.
 5. Thedisplay device according to claim 2, wherein the semiconductor filmcomprises polysilicon.
 6. A display device comprising: a pixel over asubstrate, the pixel comprising an EL element, a capacitor and atransistor having a top gate structure and comprising a semiconductorfilm; a gate signal line over the substrate; a source signal line overthe substrate; a first power supply line extending in a directionparallel to the gate signal line over the substrate; a first insulatingfilm over the first power supply line, the first insulating filmcomprising a first contact hole and a second contact hole; a secondpower supply line over the first insulating film extending in adirection perpendicular to the first power supply line; a conductivefilm over the first insulating film, the conductive film being connectedthe semiconductor film through the first contact hole; a secondinsulating film over the second power supply line and the conductivefilm; a pixel electrode of the EL element over the second insulatingfilm; and a third insulating film over the second insulating film, thethird insulating film comprising an opening, wherein the first powersupply line is made from a same material as the gate signal line,wherein the second power supply line is made from a same material as thesource signal line, wherein the second power supply line is connectedthe first power supply line through the second contact hole, wherein thesecond power supply line and the capacitor overlap each other, andwherein the opening and the pixel electrode overlap each other.
 7. Thedisplay device according to claim 6, wherein the pixel electrodecomprises silver.
 8. The display device according to claim 6, whereinthe pixel electrode comprises a compound of indium oxide and tin oxide.9. The display device according to claim 6, wherein the semiconductorfilm comprises polysilicon.
 10. A display device comprising: a pixelover a substrate, the pixel comprising a transistor having a top gatestructure and comprising a semiconductor film; a gate signal line overthe substrate; a source signal line over the substrate; a first powersupply line extending in a direction parallel to the gate signal lineover the substrate; a first insulating film over the first power supplyline, the first insulating film comprising a first contact hole and asecond contact hole; a second power supply line over the firstinsulating film extending in a direction perpendicular to the firstpower supply line; a conductive film over the first insulating film, theconductive film being connected the semiconductor film through the firstcontact hole; a second insulating film over the second power supply lineand the conductive film; a pixel electrode over the second insulatingfilm; a third insulating film over the second insulating film, the thirdinsulating film comprising an opening; an EL layer over the pixelelectrode; a cathode over the EL layer; a fourth insulating film overthe cathode; a filler material over the fourth insulating film; and acover member over the filler material, wherein the first power supplyline is made from a same material as the gate signal line, wherein thesecond power supply line is made from a same material as the sourcesignal line, wherein the second power supply line is connected the firstpower supply line through the second contact hole, and wherein theopening and the pixel electrode overlap each other.
 11. The displaydevice according to claim 10, wherein the pixel electrode comprisessilver.
 12. The display device according to claim 10, wherein the pixelelectrode comprises a compound of indium oxide and tin oxide.
 13. Thedisplay device according to claim 10, wherein the semiconductor filmcomprises polysilicon.